IS61LV2568-12KI中文資料北京矽成數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 36mW (max.) with CMOS input levels. The IS61LV2568 operates from a single 3.3V power supply and all inputs are TTL-compatible.

The IS61LV2568 is available in 36-pin 400-mil SOJ, and 44-pin TSOP (Type II) packages.

FEATURES

? High-speed access times: 10 and 12 ns

? High-performance, low-power CMOS process

? Multiple center power and ground pins for greater noise immunity

? Easy memory expansion with CE and OE options

? CE power-down

? Low power: 540 mW @ 10 ns 36 mW standby mode

? TTL compatible inputs and outputs

? Single 3.3V ±10 power supply

? Packages available:

– 36-pin 400-mil SOJ

– 44-pin TSOP (Type II)