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IS61LV6416-8KL-TR

包裝:托盤 封裝/外殼:44-BSOJ(0.400",10.16mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 1MBIT PARALLEL 44SOJ

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IC61LV6416-8B

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-8BI

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-8K

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-8KI

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-8T

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-8TI

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-8B

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-8BI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-8BI

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-8K

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-8KI

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-8KL

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-8T

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-8T

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-8TI

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-8TI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV6416-8TL

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IS61LV6416-8KL-TR

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    托盤

  • 存儲(chǔ)器類型:

    易失

  • 存儲(chǔ)器格式:

    SRAM

  • 技術(shù):

    SRAM - 異步

  • 存儲(chǔ)容量:

    1Mb(64K x 16)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 寫周期時(shí)間 - 字,頁:

    8ns

  • 電壓 - 供電:

    3.135V ~ 3.6V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    44-BSOJ(0.400",10.16mm 寬)

  • 供應(yīng)商器件封裝:

    44-SOJ

  • 描述:

    IC SRAM 1MBIT PARALLEL 44SOJ

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ISSI
23+
44-SOJ
73390
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢!
詢價(jià)
ISS
1844+
SOJ-44
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
ISSI, Integrated Silicon Solut
21+
44-SOJ
56200
一級代理/放心采購
詢價(jià)
ISSI
1931+
N/A
493
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物
詢價(jià)
ISSI
20+
SOP-44
2500
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
ISSI/芯成
23+
SOJ-44
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
詢價(jià)
ISSI
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
詢價(jià)
ISSI, Integrated Silicon Solu
23+
44-SOJ
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
ISSI, Integrated Silicon Solu
23+
44-SOJ
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
ISSI Integrated Silicon Soluti
23+/24+
44-BSOJ
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
詢價(jià)
更多IS61LV6416-8KL-TR供應(yīng)商 更新時(shí)間2024-12-22 10:50:00