首頁>IS61NVP102418-200B3>規(guī)格書詳情
IS61NVP102418-200B3集成電路（IC）的存儲器規(guī)格書PDF中文資料
| 廠商型號 |
IS61NVP102418-200B3 |
| 參數(shù)屬性 | IS61NVP102418-200B3 封裝/外殼為165-TBGA；包裝為托盤；類別為集成電路（IC）的存儲器；產(chǎn)品描述：IC SRAM 18MBIT PARALLEL 165TFBGA |
| 功能描述 | 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM |
| 封裝外殼 | 165-TBGA |
| 文件大小 |
277.54 Kbytes |
| 頁面數(shù)量 |
35 頁 |
| 生產(chǎn)廠商 | Integrated Silicon Solution Inc |
| 企業(yè)簡稱 |
ISSI【北京矽成】 |
| 中文名稱 | 北京矽成半導(dǎo)體有限公司官網(wǎng) |
| 原廠標識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-2-1 16:30:00 |
相關(guān)芯片規(guī)格書
更多- IS61NVF51218A-6.5B3
- IS61NVF51218A-7.5B2
- IS61NVP102418
- IS61NVF51236-6.5TQI
- IS61NVF51236-6.5B3I
- IS61NVF51218A-6.5B2I
- IS61NVF51218A-6.5B3I
- IS61NVF25672-7.5B1I
- IS61NVF51218A-6.5TQ
- IS61NVF51236-7.5TQI
- IS61NVF51218A-6.5TQI
- IS61NVF51236
- IS61NVF51218A-7.5TQ
- IS61NVF51218A-7.5TQI
- IS61NVF51218A-7.5B2I
- IS61NVF51236-6.5TQ
- IS61NVF51218A-6.5B2
- IS61NVF51218A-7.5B3
IS61NVP102418-200B3規(guī)格書詳情
DESCRIPTION
The 18 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 72 bits, 512K words by 36 bits and 1M words by 18 bits, fabricated with ISSIs advanced CMOS technology.
FEATURES
? 100 percent bus utilization
? No wait cycles between Read and Write
? Internal self-timed write cycle
? Individual Byte Write Control
? Single R/W (Read/Write) control pin
? Clock controlled, registered address, data and control
? Interleaved or linear burst sequence control using MODE input
? Three chip enables for simple depth expansion and address pipelining
? Power Down mode
? Common data inputs and data outputs
? CKE pin to enable clock and suspend operation
? JEDEC 100-pin TQFP, 165-ball PBGA and 209- ball (x72) PBGA packages
? Power supply:
NVP: VDD 2.5V (± 5), VDDQ 2.5V (± 5)
NLP: VDD 3.3V (± 5), VDDQ 3.3V/2.5V (± 5)
? JTAG Boundary Scan for PBGA packages
? Industrial temperature available
? Lead-free available
產(chǎn)品屬性
- 產(chǎn)品編號：
IS61NVP102418-200B3
- 制造商：
ISSI, Integrated Silicon Solution Inc
- 類別：
集成電路（IC） > 存儲器
- 包裝：
托盤
- 存儲器類型：
易失
- 存儲器格式：
SRAM
- 技術(shù)：
SRAM - 同步，SDR
- 存儲容量：
18Mb（1M x 18）
- 存儲器接口：
并聯(lián)
- 電壓 - 供電：
2.375V ~ 2.625V
- 工作溫度：
0°C ~ 70°C（TA）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
165-TBGA
- 供應(yīng)商器件封裝：
165-TFBGA（13x15）
- 描述：
IC SRAM 18MBIT PARALLEL 165TFBGA
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ISSI, |
21+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
詢價 | |||
ISSI Integrated Silicon Soluti |
23+/24+ |
165-TBGA |
8600 |
只供原裝進口公司現(xiàn)貨+可訂貨 |
詢價 | ||
ISSI, Integrated Silicon Solu |
23+ |
165-TFBGA13x15 |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
ISSI, Integrated Silicon Solu |
23+ |
165-TFBGA13x15 |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
ISSIINTEGRATEDSILICONSOLUTIONI |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
ISSI |
15+ |
原裝正品現(xiàn)貨 |
10 |
BGA165 |
詢價 | ||
ISSI, Integrated Silicon Solut |
21+ |
BGA |
1000 |
進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
ISS |
22+ |
NA |
30000 |
100%全新原裝 假一賠十 |
詢價 | ||
ISSI |
23+ |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
ISSI, Integrated Silicon Solut |
24+ |
165-TFBGA(13x15) |
56200 |
一級代理/放心采購 |
詢價 |
