IS61WV102416ALL-20TI中文資料北京矽成數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

? High-speed access times: 8, 10, 20 ns

? High-performance, low-power CMOS process

? Multiple center power and ground pins for greater noise immunity

? Easy memory expansion with CE and OE options

? CE power-down

? Fully static operation: no clock or refresh required

? TTL compatible inputs and outputs

? Single power supply

Vdd 1.65V to 2.2V (IS61WV102416ALL)

speed = 20ns for Vdd 1.65V to 2.2V

Vdd 2.4V to 3.6V (IS61/64WV102416BLL)

speed = 10ns for Vdd 2.4V to 3.6V

speed = 8ns for Vdd 3.3V + 5

? Packages available:

– 48-ball miniBGA (9mm x 11mm)

– 48-pin TSOP (Type I)

? Industrial and Automotive Temperature Support

? Lead-free available

? Data control for upper and lower bytes