IS61WV12816DBLL-10TI中文資料北京矽成數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

TheISSIIS61WV12816DAxx/DBxx and IS64WV12816DBxx are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated usingISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

HIGH SPEED: (IS61/64WV12816DALL/DBLL)

? High-speed access time: 8, 10, 12, 20 ns

? Low Active Power: 135 mW (typical)

? Low Standby Power: 12 μW (typical) CMOS standby

LOW POWER: (IS61/64WV12816DALS/DBLS)

? High-speed access time: 25, 35 ns

? Low Active Power: 55 mW (typical)

? Low Standby Power: 12 μW (typical) CMOS standby

? Single power supply

— VDD 1.65V to 2.2V (IS61WV12816DAxx)

— VDD 2.4V to 3.6V (IS61/64WV12816DBxx)

? Fully static operation: no clock or refresh required

? Three state outputs

? Data control for upper and lower bytes

? Industrial and Automotive temperature support

? Lead-free available