首頁 >IS62LV12816BLL>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IS62LV12816BLL | 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62LV12816BLLisahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performanceandlowpower | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | |
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62LV12816BLLisahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performanceandlowpower | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62LV12816BLLisahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performanceandlowpower | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62LV12816BLLisahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performanceandlowpower | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62LV12816BLLisahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performanceandlowpower | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62LV12816BLLisahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performanceandlowpower | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62LV12816BLLisahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performanceandlowpower | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62LV12816BLLisahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performanceandlowpower | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62LV12816BLLisahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performanceandlowpower | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62LV12816BLLisahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performanceandlowpower | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62LV12816BLLisahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performanceandlowpower | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62LV12816BLLisahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performanceandlowpower | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DESCRIPTION TheISSIIS62LV12816BLLisahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performanceandlowpower | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI |
詳細(xì)參數(shù)
- 型號:
IS62LV12816BLL
- 制造商:
ISSI
- 制造商全稱:
Integrated Silicon Solution, Inc
- 功能描述:
128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ISSI |
22+ |
QFP |
5000 |
全新原裝現(xiàn)貨!自家?guī)齑? |
詢價(jià) | ||
ISSI |
23+ |
BGA |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
ISSI |
24+ |
BGA |
2140 |
全新原裝!現(xiàn)貨特價(jià)供應(yīng) |
詢價(jià) | ||
ISSI |
23+ |
BGA |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
ISSI |
1815+ |
BGA |
6528 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
ISSI |
21+ |
TSOP |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價(jià) | ||
ISSI |
23+ |
BGA |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ISSI |
21+ |
BGA |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
ISSI |
BGA |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
ISSI |
23+ |
SOP |
4826 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) |
相關(guān)規(guī)格書
更多- IS62LV12816BLL-10B
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相關(guān)庫存
更多- IS62LV12816BLL-10BI
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- IS62LV256-70RTI