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IS62VV25616L

256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62VV25616LandIS62VV25616LLarehigh-speed,4,194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS62VV25616LL-70M

256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62VV25616LandIS62VV25616LLarehigh-speed,4,194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS62VV25616LL-70MI

256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62VV25616LandIS62VV25616LLarehigh-speed,4,194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS62VV25616LL-70T

256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62VV25616LandIS62VV25616LLarehigh-speed,4,194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS62VV25616LL-70TI

256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62VV25616LandIS62VV25616LLarehigh-speed,4,194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS62VV25616LL-85M

256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62VV25616LandIS62VV25616LLarehigh-speed,4,194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS62VV25616LL-85MI

256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62VV25616LandIS62VV25616LLarehigh-speed,4,194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS62VV25616LL-85T

256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62VV25616LandIS62VV25616LLarehigh-speed,4,194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS62VV25616LL-85TI

256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

DESCRIPTION TheISSIIS62VV25616LandIS62VV25616LLarehigh-speed,4,194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-perfor

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IC62VV25616L

256Kx16bit1.8VandUltraLowPowerCMOSStaticRAM

DESCRIPTION TheICSIIC62VV25616LandIC62VV25616LLarelow-power,4.194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performa

ICSI

Integrated Circuit Solution Inc

IC62VV25616LL

256Kx16bit1.8VandUltraLowPowerCMOSStaticRAM

DESCRIPTION TheICSIIC62VV25616LandIC62VV25616LLarelow-power,4.194,304bitstaticRAMsorganizedas262,144wordsby16bits.TheyarefabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performa

ICSI

Integrated Circuit Solution Inc

詳細參數(shù)

  • 型號:

    IS62VV25616L

  • 制造商:

    ISSI

  • 制造商全稱:

    Integrated Silicon Solution, Inc

  • 功能描述:

    256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

供應商型號品牌批號封裝庫存備注價格
ISSI
2339+
BGA
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
詢價
ISSI
2015+
SMD/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
詢價
ISSI
22+
TQFP
5000
全新原裝現(xiàn)貨!自家?guī)齑?
詢價
ISSI
22+
BGA
4500
原裝正品!公司現(xiàn)貨!歡迎來電!
詢價
ISSI
1844+
TSOP
6528
只做原裝正品假一賠十為客戶做到零風險!!
詢價
ISSI
新年份
BGA
3500
絕對全新原裝現(xiàn)貨,歡迎來電查詢
詢價
ISSI
2020+
BGA
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
ISSI
20+
TSOP
2960
誠信交易大量庫存現(xiàn)貨
詢價
ISSI
20+
BGA
65300
一級代理/放心購買!
詢價
ISSI
23+
BGA(48)
90000
專營進口原裝正品假一賠十可開增票
詢價
更多IS62VV25616L供應商 更新時間2024-11-1 17:14:00