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IS64LF12836A集成電路(IC)的存儲器規(guī)格書PDF中文資料

IS64LF12836A
廠商型號

IS64LF12836A

參數(shù)屬性

IS64LF12836A 封裝/外殼為165-TBGA;包裝為托盤;類別為集成電路(IC)的存儲器;產(chǎn)品描述:IC SRAM 4.5MBIT PAR 165TFBGA

功能描述

128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

封裝外殼

165-TBGA

文件大小

166.7 Kbytes

頁面數(shù)量

25

生產(chǎn)廠商 Integrated Silicon Solution Inc
企業(yè)簡稱

ISSI北京矽成

中文名稱

北京矽成半導(dǎo)體有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-2-11 20:00:00

IS64LF12836A規(guī)格書詳情

DESCRIPTION

The ISSI IS61(64)LF12832A, IS64VF12832A, IS61(64)LF/VF12836A and IS61(64)LF/VF25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LF12832A is organized as 131,072 words by 32 bits. The IS61(64)LF/VF12836A is organized as 131,072 words by 36 bits. The IS61(64)LF/VF25618A is organized as 262,144 words by 18 bits. Fabricated with ISSIs advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.

FEATURES

? Internal self-timed write cycle

? Individual Byte Write Control and Global Write

? Clock controlled, registered address, data and control

? Burst sequence control using MODE input

? Three chip enable option for simple depth expansion and address pipelining

? Common data inputs and data outputs

? Auto Power-down during deselect

? Single cycle deselect

? Snooze MODE for reduced-power standby

? Power Supply

LF: VDD 3.3V + 5, VDDQ 3.3V/2.5V + 5

VF: VDD 2.5V -5 +10, VDDQ 2.5V -5 +10

? JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-pin PBGA packages

? Automotive temperature available

? Lead-free available

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IS64LF12836A-7.5B3LA3-TR

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    易失

  • 存儲器格式:

    SRAM

  • 技術(shù):

    SRAM - 同步,SDR

  • 存儲容量:

    4.5Mb(128K x 36)

  • 存儲器接口:

    并聯(lián)

  • 電壓 - 供電:

    3.135V ~ 3.465V

  • 工作溫度:

    -40°C ~ 125°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    165-TBGA

  • 供應(yīng)商器件封裝:

    165-TFBGA(13x15)

  • 描述:

    IC SRAM 4.5MBIT PAR 165TFBGA

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
ISSI
23+
NA/
3350
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
詢價
ISSI Integrated Silicon Soluti
21+
165TFBGA (13x15)
13880
公司只售原裝,支持實單
詢價
ISSI
24+
原廠原裝
16000
原裝優(yōu)勢絕對有貨
詢價
ISSI
23+
BGA
6500
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
詢價
ISSI
2020+
BGA165
3850
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
ISSI Integrated Silicon Soluti
23+/24+
165-TBGA
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
詢價
ISSI,
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
詢價
ISSI(美國芯成)
23+
TFBGA165(13x15)
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!!
詢價
ISSI Integrated Silicon Soluti
22+
165TFBGA (13x15)
9000
原廠渠道,現(xiàn)貨配單
詢價
ISSI
2023+
BGA
6893
專注全新正品,優(yōu)勢現(xiàn)貨供應(yīng)
詢價