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IS66WVO32M8DALL-200BLI集成電路(IC)存儲(chǔ)器規(guī)格書(shū)PDF中文資料
廠商型號(hào) |
IS66WVO32M8DALL-200BLI |
參數(shù)屬性 | IS66WVO32M8DALL-200BLI 封裝/外殼為24-TBGA;包裝為卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶;類(lèi)別為集成電路(IC) > 存儲(chǔ)器;產(chǎn)品描述:IC PSRAM 256MBIT SPI OCT 24TFBGA |
功能描述 | 256Mb OctalRAM 1.8V/3.0V SERIAL PSRAM MEMORY WITH 200MHZ DTR OPI (OCTAL PERIPHERAL INTERFACE) PROTOCOL |
文件大小 |
934.59 Kbytes |
頁(yè)面數(shù)量 |
34 頁(yè) |
生產(chǎn)廠商 | Integrated Silicon Solution Inc |
企業(yè)簡(jiǎn)稱(chēng) |
ISSI【北京矽成】 |
中文名稱(chēng) | 北京矽成半導(dǎo)體有限公司官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2024-11-19 16:36:00 |
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IS66WVO32M8DALL-200BLI規(guī)格書(shū)詳情
FEATURES
? Industry Standard Serial Interface
- Octal Peripheral Interface (OPI) Protocol
- Low Signal Counts :11 Signal pins (CS#,
SCLK, DQSM, SIO0~SIO7)
? High Performance
- Up to 400MB/s
- Double Transfer Rate (DTR) Operation
- 200MHz (400MB/s) at 105°C
- Source Synchronous Output signal during
Read Operation (DQSM)
- Data Mask during Write Operation
(DQSM)
- Configurable Latency for Read/Write
Operation)
- Supports Variable Latency mode and
Fixed Latency mode
- Configurable Drive Strength
- Supports Wrapped Burst mode and
Continuous Burst mode
- Supports Deep Power Down mode
- Hidden Refresh
? Burst Operation
- Configurable Wrapped Burst Length :
16, 32, 64, and 128
- Word Order Burst Sequence
- Continuous Burst Operation:
Continues Read operation until the end of
array address
Continues Write operation even after the
end of array address
? Low Power Consumption
- Single 1.7V to 1.95V Voltage Supply
- Single 2.7V to 3.6V Voltage Supply
- 750 μA Standby Current (typ.)
? Hardware Features
- SCLK Input: Serial clock input
- SIO0 - SIO7:
Serial Data Input or Serial Data Output
- DQSM:
- Output during command, address
transactions as Refresh Collision
Indicator
- Output during read data transactions
as Read Data Strobe
- Input during write data transactions as
Write Data Mask
- RESET#: Hardware Reset pin
? Temperature Grades
- Industrial: -40°C to +85°C
- Auto (A2) Grade: -40°C to +105°C
? Industry Standard PACKAGE
- B = 24-ball TFBGA 6x8mm 5x5 Array
- KGD (Call Factory)
IS66WVO32M8DALL-200BLI屬于集成電路(IC) > 存儲(chǔ)器。北京矽成半導(dǎo)體有限公司制造生產(chǎn)的IS66WVO32M8DALL-200BLI存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性?xún)煞N,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。
產(chǎn)品屬性
更多- 產(chǎn)品編號(hào):
IS66WVO32M8DALL-200BLI
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 類(lèi)別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶
- 存儲(chǔ)器類(lèi)型:
易失
- 存儲(chǔ)器格式:
PSRAM
- 技術(shù):
PSRAM(偽 SRAM)
- 存儲(chǔ)容量:
256Mb(32M x 8)
- 存儲(chǔ)器接口:
SPI - 八 I/O
- 寫(xiě)周期時(shí)間 - 字,頁(yè):
40ns
- 電壓 - 供電:
1.7V ~ 1.95V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類(lèi)型:
表面貼裝型
- 封裝/外殼:
24-TBGA
- 供應(yīng)商器件封裝:
24-TFBGA(6x8)
- 描述:
IC PSRAM 256MBIT SPI OCT 24TFBGA
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ISSI |
23+ |
8-SOIC |
8871 |
確保原裝正品,專(zhuān)注終端客戶(hù)一站式BOM配單 |
詢(xún)價(jià) | ||
ISSI |
22+23+ |
BGA |
20799 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢(xún)價(jià) | ||
ISSI Integrated Silicon Soluti |
21+ |
54VFBGA (6x8) |
13880 |
公司只售原裝,支持實(shí)單 |
詢(xún)價(jià) | ||
ISSI Integrated Silicon Soluti |
23+/24+ |
24-TBGA |
8600 |
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨 |
詢(xún)價(jià) | ||
IR |
23+ |
SMD |
8000 |
只做原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
IR |
23+ |
SMD |
7000 |
詢(xún)價(jià) | |||
ISSIINTEGRATEDSILICONSOLUTIONI |
2021+ |
SMD |
100500 |
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢(xún)價(jià) | ||
ISSI, Integrated Silicon Solut |
21+ |
54-VFBGA(6x8) |
56200 |
一級(jí)代理/放心采購(gòu) |
詢(xún)價(jià) | ||
ISSI |
2020+ |
VFBGA(54) |
3850 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
ISSI, Integrated Silicon Solut |
21+ |
BGA |
5280 |
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng) |
詢(xún)價(jià) |