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IS66WVO8M8DBLL-166BLI集成電路(IC)存儲器規(guī)格書PDF中文資料

IS66WVO8M8DBLL-166BLI
廠商型號

IS66WVO8M8DBLL-166BLI

參數(shù)屬性

IS66WVO8M8DBLL-166BLI 封裝/外殼為24-TBGA;包裝為卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶;類別為集成電路(IC) > 存儲器;產(chǎn)品描述:IC PSRAM 64MBIT SPI OCTL 24TFBGA

功能描述

64Mb OctalRAM 1.8V/3.0V SERIAL PSRAM MEMORY WITH 200MHZ DTR OPI (OCTAL PERIPHERAL INTERFACE) PROTOCOL
IC PSRAM 64MBIT SPI OCTL 24TFBGA

文件大小

939.92 Kbytes

頁面數(shù)量

34

生產(chǎn)廠商 Integrated Silicon Solution Inc
企業(yè)簡稱

ISSI北京矽成

中文名稱

北京矽成半導體有限公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

原廠下載下載地址一下載地址二

更新時間

2024-11-19 10:10:00

IS66WVO8M8DBLL-166BLI規(guī)格書詳情

FEATURES

? Industry Standard Serial Interface

- Octal Peripheral Interface (OPI) Protocol

- Low Signal Counts :11 Signal pins (CS#,

SCLK, DQSM, SIO0~SIO7)

? High Performance

- Up to 400MB/s

- Double Transfer Rate (DTR) Operation

- 200MHz (400MB/s) at 105°C

- 166MHz (332MB/s) at 125°C

- Source Synchronous Output signal during

Read Operation (DQSM)

- Data Mask during Write Operation

(DQSM)

- Configurable Latency for Read/Write

Operation)

- Supports Variable Latency mode and

Fixed Latency mode

- Configurable Drive Strength

- Supports Wrapped Burst mode and

Continuous Burst mode

- Supports Deep Power Down mode

- Hidden Refresh

? Burst Operation

- Configurable Wrapped Burst Length :

16, 32, 64, and 128

- Word Order Burst Sequence

- Continuous Burst Operation:

- Continues Read operation until the end

of array address

- Continues Write operation even after the

end of array address

? Low Power Consumption

- Single 1.7V to 1.95V Voltage Supply

- Single 2.7V to 3.6V Voltage Supply

- 375 μA Standby Current (typ.) at 105°C.

? Hardware Features

- SCLK Input: Serial clock input

- SIO0 - SIO7:

Serial Data Input or Serial Data Output

- DQSM:

- Output during command, address

transactions as Refresh Collision

Indicator

- Output during read data transactions

as Read Data Strobe

- Input during write data transactions as

Write Data Mask

- RESET#: Hardware Reset pin

? Temperature Grades

- Industrial: -40°C to +85°C

- Auto (A2) Grade: -40°C to +105°C

- Auto (A3) Grade: -40°C to +125°C

? Industry Standard PACKAGE

- B = 24-ball TFBGA 6x8mm 5x5 Array

- KGD (Call Factory)

IS66WVO8M8DBLL-166BLI屬于集成電路(IC) > 存儲器。北京矽成半導體有限公司制造生產(chǎn)的IS66WVO8M8DBLL-166BLI存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設備的半導體器件。這些器件分為非易失性或易失性兩種,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

產(chǎn)品屬性

更多
  • 產(chǎn)品編號:

    IS66WVO8M8DBLL-166BLI

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • 存儲器類型:

    易失

  • 存儲器格式:

    PSRAM

  • 技術:

    PSRAM(偽 SRAM)

  • 存儲容量:

    64Mb(8M x 8)

  • 存儲器接口:

    SPI - 八 I/O

  • 寫周期時間 - 字,頁:

    36ns

  • 電壓 - 供電:

    2.7V ~ 3.6V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    24-TBGA

  • 供應商器件封裝:

    24-TFBGA(6x8)

  • 描述:

    IC PSRAM 64MBIT SPI OCTL 24TFBGA

供應商 型號 品牌 批號 封裝 庫存 備注 價格
ISSI
23+
8-SOIC
8871
確保原裝正品,專注終端客戶一站式BOM配單
詢價
ISSI, Integrated Silicon Solut
21+
54-VFBGA(6x8)
56200
一級代理/放心采購
詢價
ISSI
21+
SOP8
25
原包裝原標現(xiàn)貨,假一罰十,
詢價
IR
22+
SMD
6000
終端可免費供樣,支持BOM配單
詢價
ISSI Integrated Silicon Solut
24+
54-VFBGA
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
ISSI
22+23+
BGA
20799
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
ISSI/芯成
21+
SOP-8
25
詢價
ISSI
2020+
BGA
420
原裝現(xiàn)貨,優(yōu)勢渠道訂貨假一賠十
詢價
ISSI
23+
BGA
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
ISSI
2020+
VFBGA(54)
3850
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價