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ISL6605IB中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

ISL6605IB
廠(chǎng)商型號(hào)

ISL6605IB

參數(shù)屬性

ISL6605IB 封裝/外殼為8-SOIC(0.154",3.90mm 寬);包裝為卷帶(TR);類(lèi)別為集成電路(IC) > 柵極驅(qū)動(dòng)器;產(chǎn)品描述:IC GATE DRVR HALF-BRIDGE 8SOIC

功能描述

Synchronous Rectified MOSFET Driver

文件大小

266.39 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠(chǎng)商 Intersil Corporation
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更新時(shí)間

2024-11-12 18:10:00

ISL6605IB規(guī)格書(shū)詳情

The ISL6605 is a high frequency, MOSFET driver optimized

to drive two N-Channel power MOSFETs in a synchronousrectified buck converter topology. This driver combined with

an Intersil HIP63xx or ISL65xx Multi-Phase Buck PWM

controller forms a complete single-stage core-voltage

regulator solution with high efficiency performance at high

switching frequency for advanced microprocessors.

The IC is biased by a single low voltage supply (5V) and

minimizes low driver switching losses for high MOSFET gate

capacitance and high switching frequency applications.

Each driver is capable of driving a 3000pF load with an 8ns

propagation delay and less than 10ns transition time. This

product implements bootstrapping on the upper gate with an

internal bootstrap Schottky diode, reducing implementation

cost, complexity, and allowing the use of higher

performance, cost effective N-Channel MOSFETs. Adaptive

shoot-through protection is integrated to prevent both

MOSFETs from conducting simultaneously.

The ISL6605 features 4A typical sink current for the lower

gate driver, which is capable of holding the lower MOSFET

gate during the Phase node rising edge to prevent shootthrough power loss caused by the high dv/dt of the Phase

node.

The ISL6605 also features a Three-State PWM input that,

working together with Intersil multi-phase PWM controllers,

will prevent a negative transient on the output voltage when

the output is being shut down. This feature eliminates the

Schottky diode that is usually seen in a microprocessor

power system for protecting the microprocessor from

reversed-output-voltage damage.

Features

? Drives Two N-Channel MOSFETs

? Adaptive Shoot-Through Protection

? 0.4Ω On-Resistance and 4A Sink Current Capability

? Supports High Switching Frequency

- Fast Output Rise and Fall Time

- Ultra Low Propagation Delay 8ns

? Three-State PWM Input for Power Stage Shutdown

? Internal Bootstrap Schottky Diode

? Low Bias Supply Current (5V, 30μA)

? Enable Input

? QFN Package

- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat

No Leads-Product Outline.

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile.

? Pb-Free Plus Anneal Available (RoHS Compliant)

Applications

? Core Voltage Supplies for Intel? and AMD?

Microprocessors

? High Frequency Low Profile DC/DC Converters

? High Current Low Voltage DC/DC Converters

? Synchronous Rectification for Isolated Power Supplies

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    ISL6605IB

  • 制造商:

    Renesas Electronics America Inc

  • 類(lèi)別:

    集成電路(IC) > 柵極驅(qū)動(dòng)器

  • 包裝:

    卷帶(TR)

  • 驅(qū)動(dòng)配置:

    半橋

  • 通道類(lèi)型:

    同步

  • 柵極類(lèi)型:

    N 溝道 MOSFET

  • 電壓 - 供電:

    4.5V ~ 5.5V

  • 邏輯電壓?- VIL,VIH:

    1V,2V

  • 電流 - 峰值輸出(灌入,拉出):

    2A,2A

  • 輸入類(lèi)型:

    非反相

  • 上升/下降時(shí)間(典型值):

    8ns,8ns

  • 工作溫度:

    -40°C ~ 125°C(TJ)

  • 安裝類(lèi)型:

    表面貼裝型

  • 封裝/外殼:

    8-SOIC(0.154",3.90mm 寬)

  • 供應(yīng)商器件封裝:

    8-SOIC

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8SOIC

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