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ISL6605IRZA集成電路(IC)的柵極驅(qū)動(dòng)器規(guī)格書PDF中文資料

ISL6605IRZA
廠商型號

ISL6605IRZA

參數(shù)屬性

ISL6605IRZA 封裝/外殼為8-VQFN 裸露焊盤;包裝為管件;類別為集成電路(IC)的柵極驅(qū)動(dòng)器;產(chǎn)品描述:IC GATE DRVR HALF-BRIDGE 8QFN

功能描述

Synchronous Rectified MOSFET Driver

封裝外殼

8-VQFN 裸露焊盤

文件大小

266.39 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

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數(shù)據(jù)手冊

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更新時(shí)間

2025-1-24 20:00:00

ISL6605IRZA規(guī)格書詳情

The ISL6605 is a high frequency, MOSFET driver optimized

to drive two N-Channel power MOSFETs in a synchronousrectified buck converter topology. This driver combined with

an Intersil HIP63xx or ISL65xx Multi-Phase Buck PWM

controller forms a complete single-stage core-voltage

regulator solution with high efficiency performance at high

switching frequency for advanced microprocessors.

The IC is biased by a single low voltage supply (5V) and

minimizes low driver switching losses for high MOSFET gate

capacitance and high switching frequency applications.

Each driver is capable of driving a 3000pF load with an 8ns

propagation delay and less than 10ns transition time. This

product implements bootstrapping on the upper gate with an

internal bootstrap Schottky diode, reducing implementation

cost, complexity, and allowing the use of higher

performance, cost effective N-Channel MOSFETs. Adaptive

shoot-through protection is integrated to prevent both

MOSFETs from conducting simultaneously.

The ISL6605 features 4A typical sink current for the lower

gate driver, which is capable of holding the lower MOSFET

gate during the Phase node rising edge to prevent shootthrough power loss caused by the high dv/dt of the Phase

node.

The ISL6605 also features a Three-State PWM input that,

working together with Intersil multi-phase PWM controllers,

will prevent a negative transient on the output voltage when

the output is being shut down. This feature eliminates the

Schottky diode that is usually seen in a microprocessor

power system for protecting the microprocessor from

reversed-output-voltage damage.

Features

? Drives Two N-Channel MOSFETs

? Adaptive Shoot-Through Protection

? 0.4Ω On-Resistance and 4A Sink Current Capability

? Supports High Switching Frequency

- Fast Output Rise and Fall Time

- Ultra Low Propagation Delay 8ns

? Three-State PWM Input for Power Stage Shutdown

? Internal Bootstrap Schottky Diode

? Low Bias Supply Current (5V, 30μA)

? Enable Input

? QFN Package

- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat

No Leads-Product Outline.

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile.

? Pb-Free Plus Anneal Available (RoHS Compliant)

Applications

? Core Voltage Supplies for Intel? and AMD?

Microprocessors

? High Frequency Low Profile DC/DC Converters

? High Current Low Voltage DC/DC Converters

? Synchronous Rectification for Isolated Power Supplies

產(chǎn)品屬性

  • 產(chǎn)品編號:

    ISL6605IRZA

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 柵極驅(qū)動(dòng)器

  • 包裝:

    管件

  • 驅(qū)動(dòng)配置:

    半橋

  • 通道類型:

    同步

  • 柵極類型:

    N 溝道 MOSFET

  • 電壓 - 供電:

    4.5V ~ 5.5V

  • 邏輯電壓?- VIL,VIH:

    1V,2V

  • 電流 - 峰值輸出(灌入,拉出):

    2A,2A

  • 輸入類型:

    非反相

  • 上升/下降時(shí)間(典型值):

    8ns,8ns

  • 工作溫度:

    -40°C ~ 125°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    8-VQFN 裸露焊盤

  • 供應(yīng)商器件封裝:

    8-QFN(3x3)

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8QFN

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
INTERSIL
23+
NA/
23
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
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INTERSIL
24+
QFN
990000
明嘉萊只做原裝正品現(xiàn)貨
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INTERSIL
23+
QFN
90000
一定原裝深圳現(xiàn)貨
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INTERSIL
23+
PLCC
5000
原裝正品,假一罰十
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INTERSIL
24+
SOP8
24
詢價(jià)
INTERSI
18+
QFN8
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價(jià)
INTERSIL
22+
QFN
12000
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INFINEON
23+
SOP
8000
只做原裝現(xiàn)貨
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INFINEON
23+
SOP
7000
詢價(jià)
infineon
1844+
SOP
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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