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ISL6610集成電路(IC)的柵極驅(qū)動(dòng)器規(guī)格書PDF中文資料

ISL6610
廠商型號(hào)

ISL6610

參數(shù)屬性

ISL6610 封裝/外殼為14-SOIC(0.154",3.90mm 寬);包裝為卷帶(TR);類別為集成電路(IC)的柵極驅(qū)動(dòng)器;產(chǎn)品描述:IC GATE DRVR HALF-BRIDGE 14SOIC

功能描述

Dual Synchronous Rectified MOSFET Drivers

文件大小

278.87 Kbytes

頁(yè)面數(shù)量

11 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

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更新時(shí)間

2024-12-23 12:35:00

ISL6610規(guī)格書詳情

The ISL6610, ISL6610A integrates two ISL6609, ISL6609A

drivers with enable function removed and is optimized to

drive two independent power channels in a synchronousrectified buck converter topology. These drivers, combined

with an Intersil ISL63xx or ISL65xx multiphase PWM

controller, form a complete high efficiency voltage regulator

at high switching frequency.

The IC is biased by a single low voltage supply (5V),

minimizing driver switching losses in high MOSFET gate

capacitance and high switching frequency applications.

Each driver is capable of driving a 3nF load with less than

10ns rise/fall time. Bootstrapping of the upper gate driver is

implemented via an internal low forward drop diode,

reducing implementation cost, complexity, and allowing the

use of higher performance, cost effective N-Channel

MOSFETs. Adaptive shoot-through protection is integrated

to prevent both MOSFETs from conducting simultaneously.

The ISL6610, ISL6610A features 4A typical sink current for

the lower gate driver, enhancing the lower MOSFET gate

hold-down capability during PHASE node rising edge,

preventing power loss caused by the self turn-on of the lower

MOSFET due to the high dV/dt of the switching node.

The ISL6610, ISL6610A also features an input that

recognizes a high-impedance state, working together with

Intersil multiphase PWM controllers to prevent negative

transients on the controlled output voltage when operation is

suspended. This feature eliminates the need for the schottky

diode that may be utilized in a power system to protect the

load from negative output voltage damage.

In addition, the ISL6610As bootstrap function is designed to

prevent the BOOT capacitor from overcharging, should

excessively large negative swings occur at the transitions of

the PHASE node.

Features

? 5V Quad N-Channel MOSFET Drives for Two

Synchronous Rectified Bridges

? Pin-to-pin Compatible with ISL6614 (12V Drive)

? Adaptive Shoot-Through Protection

? 0.4Ω On-Resistance and 4A Sink Current Capability

? Supports High Switching Frequency

- Fast Output Rise and Fall

- Low Tri-State Hold-Off Time

? BOOT Capacitor Overcharge Prevention (ISL6610A)

? Low VF Internal Bootstrap Diode

? Power-On Reset

? QFN Package

- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat

No Leads-Product Outline

- Near Chip-Scale Package Footprint; Improves PCB

Utilization, Thinner Profile

? Pb-Free Plus Anneal Available (RoHS Compliant)

Applications

? Core Voltage Supplies for Intel? and AMD?

Microprocessors

? High Frequency Low Profile High Efficiency DC/DC

Converters

? High Current Low Voltage DC/DC Converters

? Synchronous Rectification for Isolated Power Supplies

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    ISL6610ACBZ-T

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 柵極驅(qū)動(dòng)器

  • 包裝:

    卷帶(TR)

  • 驅(qū)動(dòng)配置:

    半橋

  • 通道類型:

    同步

  • 柵極類型:

    N 溝道 MOSFET

  • 電壓 - 供電:

    4.5V ~ 5.5V

  • 電流 - 峰值輸出(灌入,拉出):

    -,4A

  • 輸入類型:

    非反相

  • 上升/下降時(shí)間(典型值):

    8ns,8ns

  • 工作溫度:

    0°C ~ 125°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    14-SOIC(0.154",3.90mm 寬)

  • 供應(yīng)商器件封裝:

    14-SOIC

  • 描述:

    IC GATE DRVR HALF-BRIDGE 14SOIC

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INTERSIL
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12245
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9000
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SOP
8560
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