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ISL6611A中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

ISL6611A
廠商型號

ISL6611A

參數(shù)屬性

ISL6611A 封裝/外殼為16-VQFN 裸露焊盤;包裝為管件;類別為集成電路(IC) > 柵極驅(qū)動器;產(chǎn)品描述:IC GATE DRVR HALF-BRIDGE 16QFN

功能描述

Phase Doubler with Integrated Drivers and Phase Shedding Function

文件大小

227.02 Kbytes

頁面數(shù)量

14

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-10-25 18:30:00

ISL6611A規(guī)格書詳情

The ISL6611A utilizes Intersil’s proprietary Phase Doubler

scheme to modulate two-phase power trains with single

PWM input. It doubles the number of phases that Intersil’s

ISL63xx multiphase controllers can support. At the same

time, the PWM line can be pulled high to disable the

corresponding phase or higher phase(s) when the enable

pin (EN_PH) is pulled low. This simplifies the phase

shedding implementation. For layout simplicity and

improving system performance, the device integrates two 5V

drivers (ISL6609) and current balance function.

The ISL6611A is designed to minimize the number of analog

signals interfacing between the controller and drivers in high

phase count and scalable applications. The common COMP

signal, which is usually seen with conventional cascaded

configuration, is not required; this improves noise immunity

and simplifies the layout. Furthermore, the ISL6611A

provides low part count and a low cost advantage over the

conventional cascaded technique.

The IC is biased by a single low voltage supply (5V),

minimizing driver switching losses in high MOSFET gate

capacitance and high switching frequency applications.

Bootstrapping of the upper gate driver is implemented via an

internal low forward drop diode, reducing implementation

cost, complexity, and allowing the use of higher

performance, cost effective N-Channel MOSFETs. Adaptive

shoot-through protection is integrated to prevent both

MOSFETs from conducting simultaneously.

The ISL6611A features 4A typical sink current for the lower

gate driver, enhancing the lower MOSFET gate hold-down

capability during PHASE node rising edge, preventing power

loss caused by the self turn-on of the lower MOSFET due to

the high dV/dt of the switching node.

The ISL6611A also features an input that recognizes a

high-impedance state, working together with Intersil

multiphase PWM controllers to prevent negative transients

on the controlled output voltage when operation is

suspended. This feature eliminates the need for the Schottky

diode that may be utilized in a power system to protect the

load from negative output voltage damage.

In addition, the ISL6611A’s bootstrap function is designed to

prevent the BOOT capacitor from overcharging, should

excessively large negative swings occur at the transitions of

the PHASE node.

Features

? Proprietary Phase Doubler Scheme with Phase Shedding

Function (Patent Pending)

- Enhanced Light to Full Load Efficiency

? Patented Current Balancing with rDS(ON) Current Sensing

and Adjustable Gain

? Quad MOSFET Drives for Two Synchronous Rectified

Bridge with Single PWM Input

? Channel Synchronization and Interleaving Options

? Adaptive Zero Shoot-Through Protection

? 0.4Ω On-Resistance and 4A Sink Current Capability

? 36V Internal Bootstrap Schottky Diode

? Bootstrap Capacitor Overcharging Prevention (ISL6611A)

? Supports High Switching Frequency (Up to 1MHz)

- Fast Output Rise and Fall

? Tri-State PWM Input for Output Stage Shutdown

? Phase Enable Input and PWM Forced High Output to

Interface with Intersil’s Controller for Phase Shedding

? QFN Package

- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat

No Leads-Product Outline

- Near Chip-Scale Package Footprint; Improves PCB

Utilization, Thinner Profile

- Pb-Free (RoHS Compliant)

Applications

? High Current Low Voltage DC/DC Converters

? High Frequency and High Efficiency VRM and VRD

? High Phase Count and Phase Shedding Applications

產(chǎn)品屬性

  • 產(chǎn)品編號:

    ISL6611ACRZ-T

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 柵極驅(qū)動器

  • 包裝:

    管件

  • 驅(qū)動配置:

    半橋

  • 通道類型:

    同步

  • 柵極類型:

    N 溝道 MOSFET

  • 電壓 - 供電:

    4.5V ~ 5.5V

  • 邏輯電壓?- VIL,VIH:

    0.8V,2V

  • 電流 - 峰值輸出(灌入,拉出):

    -,4A

  • 輸入類型:

    非反相

  • 上升/下降時間(典型值):

    8ns,8ns

  • 工作溫度:

    0°C ~ 125°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    16-VQFN 裸露焊盤

  • 供應(yīng)商器件封裝:

    16-QFN(4x4)

  • 描述:

    IC GATE DRVR HALF-BRIDGE 16QFN

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
RENESAS(瑞薩)/IDT
23+
QFN16EP(4x4)
6000
誠信服務(wù),絕對原裝原盤
詢價
INTERSIL
22+
QFN
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價
INTERSIL
23+
NA/
2820
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
RENESAS(瑞薩)/IDT
23+
QFN16EP(4x4)
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!!
詢價
RENESAS(瑞薩)/IDT
2021+
QFN-16(4x4)
499
詢價
INTERSIL
QFN16
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
詢價
INTERSIL
2023+
QFN
2420
專注全新正品,優(yōu)勢現(xiàn)貨供應(yīng)
詢價
Intersil
22+
16QFN
9000
原廠渠道,現(xiàn)貨配單
詢價
INTERSIL
19+
QFN16
75539
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
Intersil
21+
16-QFN(4x4)
65200
一級代理/放心采購
詢價