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ISL6611ACRZ集成電路(IC)的柵極驅(qū)動器規(guī)格書PDF中文資料
廠商型號 |
ISL6611ACRZ |
參數(shù)屬性 | ISL6611ACRZ 封裝/外殼為16-VQFN 裸露焊盤;包裝為管件;類別為集成電路(IC)的柵極驅(qū)動器;產(chǎn)品描述:IC GATE DRVR HALF-BRIDGE 16QFN |
功能描述 | Phase Doubler with Integrated Drivers and Phase Shedding Function |
文件大小 |
227.02 Kbytes |
頁面數(shù)量 |
14 頁 |
生產(chǎn)廠商 | Intersil Corporation |
企業(yè)簡稱 |
Intersil |
中文名稱 | Intersil Corporation官網(wǎng) |
原廠標識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2025-1-5 15:00:00 |
ISL6611ACRZ規(guī)格書詳情
The ISL6611A utilizes Intersil’s proprietary Phase Doubler
scheme to modulate two-phase power trains with single
PWM input. It doubles the number of phases that Intersil’s
ISL63xx multiphase controllers can support. At the same
time, the PWM line can be pulled high to disable the
corresponding phase or higher phase(s) when the enable
pin (EN_PH) is pulled low. This simplifies the phase
shedding implementation. For layout simplicity and
improving system performance, the device integrates two 5V
drivers (ISL6609) and current balance function.
The ISL6611A is designed to minimize the number of analog
signals interfacing between the controller and drivers in high
phase count and scalable applications. The common COMP
signal, which is usually seen with conventional cascaded
configuration, is not required; this improves noise immunity
and simplifies the layout. Furthermore, the ISL6611A
provides low part count and a low cost advantage over the
conventional cascaded technique.
The IC is biased by a single low voltage supply (5V),
minimizing driver switching losses in high MOSFET gate
capacitance and high switching frequency applications.
Bootstrapping of the upper gate driver is implemented via an
internal low forward drop diode, reducing implementation
cost, complexity, and allowing the use of higher
performance, cost effective N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both
MOSFETs from conducting simultaneously.
The ISL6611A features 4A typical sink current for the lower
gate driver, enhancing the lower MOSFET gate hold-down
capability during PHASE node rising edge, preventing power
loss caused by the self turn-on of the lower MOSFET due to
the high dV/dt of the switching node.
The ISL6611A also features an input that recognizes a
high-impedance state, working together with Intersil
multiphase PWM controllers to prevent negative transients
on the controlled output voltage when operation is
suspended. This feature eliminates the need for the Schottky
diode that may be utilized in a power system to protect the
load from negative output voltage damage.
In addition, the ISL6611A’s bootstrap function is designed to
prevent the BOOT capacitor from overcharging, should
excessively large negative swings occur at the transitions of
the PHASE node.
Features
? Proprietary Phase Doubler Scheme with Phase Shedding
Function (Patent Pending)
- Enhanced Light to Full Load Efficiency
? Patented Current Balancing with rDS(ON) Current Sensing
and Adjustable Gain
? Quad MOSFET Drives for Two Synchronous Rectified
Bridge with Single PWM Input
? Channel Synchronization and Interleaving Options
? Adaptive Zero Shoot-Through Protection
? 0.4Ω On-Resistance and 4A Sink Current Capability
? 36V Internal Bootstrap Schottky Diode
? Bootstrap Capacitor Overcharging Prevention (ISL6611A)
? Supports High Switching Frequency (Up to 1MHz)
- Fast Output Rise and Fall
? Tri-State PWM Input for Output Stage Shutdown
? Phase Enable Input and PWM Forced High Output to
Interface with Intersil’s Controller for Phase Shedding
? QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
No Leads-Product Outline
- Near Chip-Scale Package Footprint; Improves PCB
Utilization, Thinner Profile
- Pb-Free (RoHS Compliant)
Applications
? High Current Low Voltage DC/DC Converters
? High Frequency and High Efficiency VRM and VRD
? High Phase Count and Phase Shedding Applications
產(chǎn)品屬性
- 產(chǎn)品編號:
ISL6611ACRZ
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 柵極驅(qū)動器
- 包裝:
管件
- 驅(qū)動配置:
半橋
- 通道類型:
同步
- 柵極類型:
N 溝道 MOSFET
- 電壓 - 供電:
4.5V ~ 5.5V
- 邏輯電壓?- VIL,VIH:
0.8V,2V
- 電流 - 峰值輸出(灌入,拉出):
-,4A
- 輸入類型:
非反相
- 上升/下降時間(典型值):
8ns,8ns
- 工作溫度:
0°C ~ 125°C(TJ)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
16-VQFN 裸露焊盤
- 供應商器件封裝:
16-QFN(4x4)
- 描述:
IC GATE DRVR HALF-BRIDGE 16QFN
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
RENESAS(瑞薩)/IDT |
2117+ |
QFN-16(4x4) |
315000 |
75個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
INTERSIL |
23+ |
QFN16 |
7000 |
詢價 | |||
INTERSIL |
23+ |
QFN |
10000 |
公司只做原裝正品 |
詢價 | ||
INTERSIL |
19+ |
QFN16 |
75539 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | ||
INTEREIL |
24+ |
QFN16 |
68900 |
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126 |
詢價 | ||
INTERSIL |
2223+ |
QFN |
26800 |
只做原裝正品假一賠十為客戶做到零風險 |
詢價 | ||
Intersil |
2318+ |
VFQFN-32 |
6890 |
長期供貨進口原裝熱賣現(xiàn)貨 |
詢價 | ||
INTERSIL |
21+ |
QFN |
5897 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
INTERSIL |
23+ |
QFN |
6850 |
只做原廠原裝正品現(xiàn)貨!假一賠十! |
詢價 | ||
INTERSIL |
21+ |
QFN |
6000 |
原裝正品 |
詢價 |