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ISL6613AEIBZ集成電路(IC)的柵極驅(qū)動(dòng)器規(guī)格書PDF中文資料

ISL6613AEIBZ
廠商型號(hào)

ISL6613AEIBZ

參數(shù)屬性

ISL6613AEIBZ 封裝/外殼為8-SOIC(0.154",3.90mm 寬)裸露焊盤;包裝為卷帶(TR);類別為集成電路(IC)的柵極驅(qū)動(dòng)器;產(chǎn)品描述:IC GATE DRVR HALF-BRIDGE 8SOIC

功能描述

Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP

封裝外殼

8-SOIC(0.154",3.90mm 寬)裸露焊盤

文件大小

305.95 Kbytes

頁面數(shù)量

12

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

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更新時(shí)間

2025-1-16 18:32:00

ISL6613AEIBZ規(guī)格書詳情

The ISL6612A and ISL6613A are high frequency MOSFET

drivers specifically designed to drive upper and lower power

N-Channel MOSFETs in a synchronous rectified buck

converter topology. These drivers combined with HIP63xx or

ISL65xx Multi-Phase Buck PWM controllers and N-Channel

MOSFETs form complete core-voltage regulator solutions for

advanced microprocessors.

The ISL6612A drives the upper gate to 12V, while the lower

gate can be independently driven over a range from 5V to

12V. The ISL6613A drives both upper and lower gates over

a range of 5V to 12V. This drive-voltage provides the

flexibility necessary to optimize applications involving

trade-offs between gate charge and conduction losses.

An advanced adaptive zero shoot-through protection is

integrated to prevent both the upper and lower MOSFETs

from conducting simultaneously and to minimize the dead

time. These products add an overvoltage protection feature

operational before VCC exceeds its turn-on threshold, at

which the PHASE node is connected to the gate of the low

side MOSFET (LGATE). The output voltage of the converter

is then limited by the threshold of the low side MOSFET,

which provides some protection to the microprocessor if the

upper MOSFET(s) is shorted during initial startup.

These drivers also feature a three-state PWM input which,

working together with Intersil’s multi-phase PWM controllers,

prevents a negative transient on the output voltage when the

output is shut down. This feature eliminates the Schottky

diode that is used in some systems for protecting the load

from reversed output voltage events.

Features

? Pin-to-pin Compatible with HIP6601 SOIC family

? Dual MOSFET Drives for Synchronous Rectified Bridge

? Advanced Adaptive Zero Shoot-Through Protection

- Body Diode Detection

- Auto-zero of rDS(ON) Conduction Offset Effect

? Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency

? 36V Internal Bootstrap Schottky Diode

? Bootstrap Capacitor Overcharging Prevention

? Supports High Switching Frequency (up to 2MHz)

- 3A Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

? Three-State PWM Input for Output Stage Shutdown

? Three-State PWM Input Hysteresis for Applications with

Power Sequencing Requirement

? Pre-POR Overvoltage Protection

? VCC Undervoltage Protection

? Expandable Bottom Copper Pad for Enhanced Heat

Sinking

? Dual Flat No-Lead (DFN) Package

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

? Pb-Free (RoHS Compliant)

Applications

? Core Regulators for Intel? and AMD? Microprocessors

? High Current DC/DC Converters

? High Frequency and High Efficiency VRM and VRD

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    ISL6613AEIBZ

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 柵極驅(qū)動(dòng)器

  • 包裝:

    卷帶(TR)

  • 驅(qū)動(dòng)配置:

    半橋

  • 通道類型:

    同步

  • 柵極類型:

    N 溝道 MOSFET

  • 電壓 - 供電:

    10.8V ~ 13.2V

  • 電流 - 峰值輸出(灌入,拉出):

    1.25A,2A

  • 輸入類型:

    非反相

  • 上升/下降時(shí)間(典型值):

    26ns,18ns

  • 工作溫度:

    -40°C ~ 125°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    8-SOIC(0.154",3.90mm 寬)裸露焊盤

  • 供應(yīng)商器件封裝:

    8-SOIC-EP

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8SOIC

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
INTERSIL
16+
SOP8
500
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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RENESAS(瑞薩)/IDT
23+
SOIC8EP
6000
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Intersil
20+
na
65790
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INTERSI
23+
SOP8
3216
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RENESAS(瑞薩)/IDT
1921+
SOIC-8-EP
3575
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Intersil
23+
8-SOIC
6672
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INTERSIL
22+
SOP-8
354000
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INTERSIL
HSOP8
68900
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