ISL6622AIRZ集成電路（IC）的柵極驅動器規(guī)格書PDF中文資料

The ISL6622A is a high frequency MOSFET driver designed

to drive upper and lower power N-Channel MOSFETs in a

synchronous rectified buck converter topology. The advanced

PWM protocol of ISL6622A is specifically designed to work

with Intersil VR11.1 controllers and combined with

N-Channel MOSFETs, form a complete core-voltage regulator

solution for advanced microprocessors. When ISL6622A

detects a PSI protocol sent by an Intersil VR11.1 controller, it

activates Diode Emulation (DE) operation; otherwise, it

operates in normal Continuous Conduction Mode (CCM)

PWM mode.

In the 8 Ld SOIC package, the ISL6622A drives the upper

gate to 12V while the lower get can be driven from 5V to 12V.

The 10 Ld DFN part allows for more flexibility. The upper gate

can be driven from 5V to 12V using the UVCC pin and the

lower gate can also be driven from 5V to 12V using the LVCC

pin. This provides the flexibility necessary to optimize

applications involving trade-offs between gate charge and

conduction losses.

To further enhance light load efficiency, the ISL6622A

enables diode emulation operation during PSI mode. This

allows Discontinuous Conduction Mode (DCM) by detecting

when the inductor current reaches zero and subsequently

turning off the low side MOSFET to prevent it from sinking

current.

An advanced adaptive shoot-through protection is integrated

to prevent both the upper and lower MOSFETs from

conducting simultaneously and to minimize dead time. The

ISL6622A has a 20kΩ integrated high-side gate-to-source

resistor to prevent self turn-on due to high input bus dV/dt.

This driver adds an overvoltage protection feature

operational while VCC is below its POR threshold; the

PHASE node is connected to the gate of the low side

MOSFET (LGATE) via a 10kΩ resistor limiting the output

voltage of the converter close to the gate threshold of the low

side MOSFET, dependent on the current being shunted,

which provides some protection to the load should the upper

MOSFET(s) become shorted.

Features

? Dual MOSFET Drives for Synchronous Rectified Bridge

? Advanced Adaptive Zero Shoot-Through Protection

? 36V Internal Bootstrap Schottky Diode

? Diode Emulation For Enhanced Light Load Efficiency

? Bootstrap Capacitor Overcharging Prevention

? Supports High Switching Frequency

- 3A Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

? Advanced PWM Protocol (Patent Pending) to Support PSI

Mode, Diode Emulation, Three-State Operation

? Pre-POR Overvoltage Protection for Start-up and

Shutdown

? VCC Undervoltage Protection

? Expandable Bottom Copper Pad for Enhanced Heat

Sinking

? Dual Flat No-Lead (DFN) Package

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

? Pb-Free (RoHS Compliant)

Applications

? High Light Load Efficiency Voltage Regulators

? Core Regulators for Advanced Microprocessors

? High Current DC/DC Converters

? High Frequency and High Efficiency VRM and VRD