ISL70003ASEHEV2Z中文資料瑞薩數據手冊PDF規(guī)格書

Features

? Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer

? ±1 reference voltage over line, temperature, and radiation

? Integrated MOSFETs 31mΩ?PFET/21mΩ NFET

- 95 peak efficiency

? Externally adjustable loop compensation

? Supports DDR applications (VTT tracks VDDQ/2)

- Buffer amplifier for generating VREF voltage

- 3A current sinking capability

? Grounded lid eliminates charge build up

? IMON pin for output current monitoring

? Adjustable analog soft-start

? Diode emulation for increased efficiency at light loads

? 500kHz or 300kHz operating frequency

? Monotonic start-up into prebiased load

? Full military temperature range operation

- TA = -55°C to +125°C

- TJ = -55°C to +150°C

? Radiation Acceptance (See TID Report)

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . 50krad(Si)

? SEE hardness (See SEE report)

- SEB and SEL LETTH . . . . . . . . . . . . . . . . 86.4MeV?cm2/mg

- SET at LET 86.4MeV?cm2/mg . . . . . . . . . . . .<±3 ΔVOUT

- SEFI LETTH . . . . . . . . . . . . . . . . . . . . . . . . . 60MeV?cm2/mg

? Electrically screened to DLA SMD 5962-14203