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首頁 >ISL9000IRKCZ>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
ISL9000IRKCZ | Dual LDO with Low Noise, Very High PSRR, and Low IQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | |
ISL9000IRKCZ | Dual LDO with Low Noise, Very High PSRR and Low IQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
詳細(xì)參數(shù)
- 型號(hào):
ISL9000IRKCZ
- 功能描述:
IC REG LDO 2.85V/1.8V .3A 10-DFN
- RoHS:
是
- 類別:
集成電路(IC) >> PMIC - 穩(wěn)壓器 - 線性
- 系列:
-
- 標(biāo)準(zhǔn)包裝:
1
- 穩(wěn)壓器拓?fù)浣Y(jié)構(gòu):
正,可調(diào)式
- 輸出電壓:
1.25 V ~ 10 V
- 輸入電壓:
2.9 V ~ 12 V 電壓 -
- 壓降(標(biāo)準(zhǔn)):
-
- 穩(wěn)壓器數(shù)量:
1 電流 -
- 輸出:
700mA 電流 -
- 限制(最?。?/span>
-
- 工作溫度:
-40°C ~ 85°C
- 安裝類型:
表面貼裝
- 封裝/外殼:
10-VFDFN 裸露焊盤
- 供應(yīng)商設(shè)備封裝:
10-DFN(3x3)
- 包裝:
Digi-Reel®
- 其它名稱:
NCV8535MNADJR2GOSDKR
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
intersil |
16+ |
原廠封裝 |
10000 |
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢 |
詢價(jià) | ||
Intersil |
24+ |
10-DFN |
4295 |
原裝現(xiàn)貨 |
詢價(jià) | ||
INTERSIL |
20+ |
DFN-10 |
1001 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
Intersil |
22+ |
10DFN |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
Intersil |
23+ |
10DFN |
9000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
Renesas |
22+ |
10-VFDFN |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
INTERSIL |
20+ |
SMD |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
XICOR |
23+ |
DFN10(3x3) |
6000 |
誠信服務(wù),絕對原裝原盤 |
詢價(jià) | ||
Intersil |
2318+ |
VFDFN-10 |
6890 |
長期供貨進(jìn)口原裝熱賣現(xiàn)貨 |
詢價(jià) | ||
Renesas Electronics Corporatio |
23+/24+ |
10-VFDFN |
8600 |
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨 |
詢價(jià) |
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