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ISPD06N80C3

Marking:DPAK;Package:TO-252;N-Channel MOSFET Transistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.9? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISPP06N80C3

N-ChannelMOSFETTransistor

?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.9? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperforma

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPA06N80C3

CoolMOS??PowerTransistor

CoolMOS?PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA06N80C3

CoolMOSTMPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?Fullyisolatedpackage(250

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA06N80C3

CoolMOSTMPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?Fullyisolatedpackage(250

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA06N80C3

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD06N80C3

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD06N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD06N80C3

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.9? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPD06N80C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO252 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應商型號品牌批號封裝庫存備注價格
Isocom
2339+
NA
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
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12+
DIPSOP
23108
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24+
40000
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ISOCOM
23+
22646
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
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ISOCOM
23+
DIP-6
9888
專做原裝正品,假一罰百!
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ISOCOM
23+
14+
38493
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術
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LAT
05+
原廠原裝
4285
只做全新原裝真實現(xiàn)貨供應
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LAT
23+
65480
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Lattice
8850
5
公司優(yōu)勢庫存 熱賣中!
詢價
IATTICE
24+
DIP
2987
絕對全新原裝現(xiàn)貨供應!
詢價
更多ISPD06N80C3供應商 更新時間2025-1-23 14:02:00