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ITK10A80W

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

S10A80

SCHOTTKYBARRIERRECTIFIERS(10A,70-100V)

SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestat-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

SR10A80F-G

SchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

SR10A80-G

SchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

STF10A80

Bi-DirectionalTriodeThyristor

semiWell

SemiWell Semiconductor

T10A80L

10AmpSiliconRectifiers

Features ?Lowforwardvoltagedrop ?Highcurrentcapability ?Highforwardsurgecurrentcapability ?Highreliability ?Hightemperaturesolderingguaranteed:260°C/10seconds /.375(9.5mm)leadlength,5lbs(2.3kg)tension ?RoHScompliant

TAITRON

TAITRON Components Incorporated

TK10A80E

MOSFETsSiliconN-ChannelMOS(?-MOS??

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK10A80E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

TK10A80W

MOSFETsSiliconN-ChannelMOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.46Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3.0to4.0V(VDS=10V,ID=0.45mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK10A80W

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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23+
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2407+
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7750
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23+
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7000
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HOLTEK
24+
SOP16
5000
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23+
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4978
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
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更多ITK10A80W供應(yīng)商 更新時間2025-1-25 16:18:00