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IXFH23N60Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.32Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH23N60Q

HiPerFETPowerMOSFETsQ-Class

IXYS

IXYS Corporation

IXFT23N60Q

HiPerFETPowerMOSFETsQ-Class

IXYS

IXYS Corporation

IXTQ23N60Q

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTQ23N60Q

PowerMOSFETsQ-Class

IXYS

IXYS Corporation

SFF23N60M

AvalancheRatedN-channelMOSFET

SSDI

Solid States Devices, Inc

SFF23N60Z

AvalancheRatedN-channelMOSFET

SSDI

Solid States Devices, Inc

SGF23N60UF

Ultra-FastIGBT

GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)UFseriesprovideslowconductionandswitchinglosses. UFseriesisdesignedfortheapplicationssuchasmotorcontrolandgeneralinverterswhereHighSpeedSwitchingisrequired. Features ?HighSpeedSwitching ?LowS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGF23N60UFD

Ultra-FastIGBT

GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)UFDseriesprovideslowconductionandswitchinglosses.UFDseriesisdesignedfortheapplicationssuchasmotorcontrolandgeneralinverterswhereHighSpeedSwitchingisrequired. Features ?HighSpeedSwitching ?Low

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGF23N60UFDTU

TO-3PFTubePackingData

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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Hirose
2020+
N/A
35
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HIROSE
20+
連接器
493
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Hirose
22+
NA
35
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24+
N/A
64000
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HRS/廣瀨
2420+
/
290851
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DALSA
1822+
DIP
9852
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DALSA
19+
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256800
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DALSA
23+
CDIP
10000
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DALSA
CCD32
6500
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DALSA
23+
DIP
8000
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更多ITP23N60R供應(yīng)商 更新時(shí)間2025-1-29 10:18:00