IXFN61N50中文資料IXYS數(shù)據(jù)手冊PDF規(guī)格書

High Current Power MOSFET

N-Channel Enhancement Mode

Features

? International standard package

? Isolation voltage 3000V (RMS)

? Low RDS (on) HDMOSTM processl

? Rugged polysilicon gate cell structure

? Low drain-to-case capacitance (<60 pF)

- reduced RFI

? Low package inductance (< 10 nH)

- easy to drive and to protect

? Aluminium Nitride Isolation

- increased current ratings

Applications

? DC choppers

? AC motor speed controls

? DC servo and robot drives

? Uninterruptible power supplies (UPS)

? Switched mode and resonant mode power supplies

Advantages

? Easy to mount

? Space savings

? High power density