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IXFX80N50P

PolarHV HiPerFET Power MOSFET

IXYS

IXYS Corporation

IXFE80N50

HiPerFETPowerMOSFETsSingleDieMOSFET

HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?ConformstoSOT-227Boutline ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?F

IXYS

IXYS Corporation

IXFK80N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK80N50P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFN80N50

HiPerFETPowerMOSFETsSingleDieMOSFET

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductanc

IXYS

IXYS Corporation

IXFN80N50

HiPerFETPowerMOSFETsSingleDieMOSFET

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductanc

IXYS

IXYS Corporation

IXFN80N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?Fastintrinsicdiode ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS)rated ?ULrecognized. ?Isolatedmountingbase Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFR80N50P

PolarHVHiPerFETPowerMOSFETISOPLUS247

IXYS

IXYS Corporation

IXFX80N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IXFX80N50P

  • 功能描述：

    MOSFET 500V 80A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
PLUS247?-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
IXYS/艾賽斯
23+
TO-247 PLUS
59620
原裝正品 華強(qiáng)現(xiàn)貨
 詢價
IXYS
24+
PLUS247
98
詢價
IXYS
三年內(nèi)
1983
只做原裝正品
 詢價
IXYS
1931+
N/A
341
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
IXYS/艾賽斯
21+
NA
1950
只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨!
 詢價
IXYS/艾賽斯
23+
PLUS247
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
341
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
IXYS/艾賽斯
21+
TO-3P
10000
原裝現(xiàn)貨假一罰十
 詢價
更多IXFX80N50P供應(yīng)商 更新時間2025-1-22 16:26:00

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