IXSN80N60BD1分立半導體產(chǎn)品的晶體管-IGBT-模塊規(guī)格書PDF中文資料

IXSN80N60BD1屬于分立半導體產(chǎn)品的晶體管-IGBT-模塊。由IXYS Corporation制造生產(chǎn)的IXSN80N60BD1晶體管 - IGBT - 模塊絕緣柵雙極晶體管 (IGBT) 是三端功率半導體器件，主要用作電子開關(guān)，兼具高效率和快速切換優(yōu)點。作為模塊，IGBT 配置為非對稱式橋； 升壓、降壓和制動斬波器；全橋、三電平和三相逆變器。有些器件內(nèi)置了用于監(jiān)控溫度的 NTC 熱敏電阻。IGBT 模塊可根據(jù)最大功率、集電極電流、集射擊穿電壓和配置進行區(qū)分。

Features

● International standard package

● Aluminium-nitride isolation

- high power dissipation

● Isolation voltage 3000 V~

● UL registered E 153432

● Low VCE(sat)

- for minimum on-state conduction

losses

● Fast Recovery Epitaxial Diode

- short trr

and IRM

● Low collector-to-case capacitance

(< 60 pF)

- reduced RFI

● Low package inductance (< 10 nH)

- easy to drive and to protect

Applications

● AC motor speed control

● DC servo and robot drives

● DC choppers

● Uninterruptible power supplies (UPS)

● Switch-mode and resonant-mode

power supplies

Advantages

● Space savings

● Easy to mount with 2 screws

● High power density