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IXTQ16N50P

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

VDSS=500V ID25=16A RDS(on)≤400mΩ Features UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings Highpowerdensity

IXYS

IXYS Corporation

IXTQ16N50P

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

KF16N50F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=500V,ID=17A ?Drain-SourceONRes

KECKEC CORPORATION

KEC株式會社

KF16N50P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=500V,ID=17A ?Drain-SourceONRes

KECKEC CORPORATION

KEC株式會社

MDF16N50G

N-ChannelMOSFET500V,16.0A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF16N50GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MDF16N50GTH

N-ChannelMOSFET500V,16.0A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP16N50G

N-ChannelMOSFET500V,16.0A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP16N50GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MDP16N50GTH

N-ChannelMOSFET500V,16.0A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

詳細參數(shù)

  • 型號：

    IXTQ16N50P

  • 功能描述：

    MOSFET 16.0 Amps 500 V 0.4 Ohm Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-3P
30000
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IXYS
24+
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8866
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IXYS品牌
2016+
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6528
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IXYS
23+
TO-3P
5000
專做原裝正品,假一罰百!
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IXYS
24+
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16800
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IXYS
1931+
N/A
18
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IXYS
1809+
TO-3P
1675
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IXYS/艾賽斯
23+
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5230
公司只做原裝正品
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IXYS/艾賽斯
23+
TO-3P
50000
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IXYS
22+
NA
18
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更多IXTQ16N50P供應商 更新時間2025-2-3 14:14:00

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