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IXTY1N80

High Voltage MOSFET

IXYS

IXYS Corporation

IXTY1N80P

N-Channel Enhancement Mode Avalanche Rated

IXYS

IXYS Corporation

KSMD1N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU1N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU1N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTD1N80E

TMOSPOWERFET1.0AMPERES800VOLTSRDS(on)=12OHM

ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignal

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP1N80E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP1N80E

TMOSPOWERFET1.0AMPERES800VOLTSRDS(on)=12OHMS

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PJP1N80

800VN-ChannelEnhancementModeMOSFET

FEATURES ?1A,800V,RDS(ON)=16?@VGS=10V,ID=0.5A ?LowONResistance ?FastSwitching ?LowGateCharge ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS ?IncompliancewithEURoHs2002/95/ECDirectives

PANJITPan Jit International Inc.

強茂股份有限公司

PJU1N80

800VN-ChannelEnhancementModeMOSFET

FEATURES ?1A,800V,RDS(ON)=16?@VGS=10V,ID=0.5A ?LowONResistance ?FastSwitching ?LowGateCharge ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS ?IncompliancewithEURoHs2002/95/ECDirectives

PANJITPan Jit International Inc.

強茂股份有限公司

詳細參數

  • 型號：

    IXTY1N80

  • 功能描述：

    MOSFET 1 Amps 800 V 11 W Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-252AA
30000
晶體管-分立半導體產品-原裝正品
 詢價
IXYS/艾賽斯
24+
15000
只做原廠渠道 可追溯貨源
 詢價
IXYS
24+
SOT-252
30000
詢價
IXYS
23+
TO-252AA(DPA
8600
全新原裝現貨
 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
23+
TO-252
11846
一級代理商現貨批發(fā),原裝正品,假一罰十
 詢價
IXYS
24+
35200
一級代理/放心采購
 詢價
IXYS
08+
15000
普通
 詢價
IXYS/艾賽斯
21+
TO-252
30000
只做正品原裝現貨
 詢價
IXYS
1931+
N/A
18
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更多IXTY1N80供應商 更新時間2025-2-8 11:38:00

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