首頁 >IXYP20N65C3>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IXYP20N65C3 | 包裝:卷帶(TR) 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:DISC IGBT XPT-GENX3 TO-220AB/FP | IXYS IXYS Corporation | IXYS | |
XPTTM 650V IGBT | IXYS IXYS Corporation | IXYS | ||
XPTTM 650V IGBT | IXYS IXYS Corporation | IXYS | ||
Optimized for 20-60kHz Switching | IXYS IXYS Corporation | IXYS | ||
包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-220-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 650V 18A 50W TO220 | IXYS IXYS Corporation | IXYS | ||
包裝:管件 封裝/外殼:TO-220-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 650V 18A 50W TO220 | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
NewrevolutionaryhighvoltagetechnologyWorldwidebestRDS(on)inTO220 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyWorldwidebestRDS(on)inTO220 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOS??PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyWorldwidebestRDS(on)inTO220 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
產(chǎn)品屬性
- 產(chǎn)品編號:
IXYP20N65C3
- 制造商:
IXYS
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
卷帶(TR)
- 工作溫度:
-55°C ~ 175°C(TJ)
- 描述:
DISC IGBT XPT-GENX3 TO-220AB/FP
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
67000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信,了解更多詳細(xì)信息,體驗一站式購物 |
詢價 | ||
IXYS |
1809+ |
TO-220 |
1675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
IXYS |
22+ |
TO220AB |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IXYS |
21+ |
TO220AB |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IXYS/艾賽斯 |
23+ |
TO-220 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IXYS |
23+ |
TO220AB |
9000 |
原裝正品,支持實單 |
詢價 | ||
IXYS |
2022+ |
TO-220AB |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
IXYS/Littelfuse |
2023 |
TO-220 |
2350 |
原廠代理渠道,正品保障 |
詢價 |
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