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2N6437

SiliconPNPPowerTransistors

SAVANTIC

Savantic, Inc.

2N6437

HIGH-POWERPNPSILICONTRANSISTORS

HIGH-POWERPNPSILICONTRANSISTORS ...designedforuseinindustrialpoweramplifiersandswitchingcircuitapplications. FEATURES: *HighDCCurrentGainhFE=20-80?lc=10A=12(Min)?lc=25A *LowCollector-EmitterSaturationVoltageVCB(sat)=1.0V(Max.)@lc=10A,IB=1.0A *Complementto2N

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

2N6437

SiliconPNPPowerTransistors

DESCRIPTION ?WithTO-3package ?HighDCcurrentgain ?Fastswitchingtimes ?Lowcollectorsaturationvoltage ?Complementtotype2N6338~2N6341 APPLICATIONS ?Foruseinindustrial-militarypoweramplifierandswitchingcircuitapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2N6437

HIGHPOWERPNPSILICONTRANSISTORS

DESCRIPTION DesignedforuseinIndustrial-MilitaryPowerAmplifierandSwitchingCircuitApplications

SEME-LAB

Seme LAB

2N6437

SiliconPNPPowerTransistors

DESCRIPTION ?WithTO-3package ?HighDCcurrentgain ?Fastswitchingtimes ?Lowcollectorsaturationvoltage ?Complementtotype2N6338~2N6341 APPLICATIONS ?Foruseinindustrial-militarypoweramplifierandswitchingcircuitapplications

SAVANTIC

Savantic, Inc.

2N6437

High-PowerPNPSiliconTransistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N6437

HIGH-POWERPNPSILICONTRANSISTORS

HIGH-POWERPNPSILICONTRANSISTORS ...designedforuseinindustrialpoweramplifiersandswitchingcircuitapplications. FEATURES: *HighDCCurrentGainhFE=20-80?lc=10A=12(Min)?lc=25A *LowCollector-EmitterSaturationVoltageVCB(sat)=1.0V(Max.)@lc=10A,IB=1.0A *Complementto

bocaBoca Semiconductor Corporation

博卡博卡半導體公司

2N6437

POWERTRANSISTORSPNPSILICON

High-PowerPNPSiliconTransistors ...designedforuseinindustrial–militarypoweramplifierandswitchingcircuitapplications. ?HighCollector–EmitterSustainingVoltage—VCEO(sus)=100Vdc(Min)—2N6437=120Vdc(Min)—2N6438 ?HighDCCurrentGain—hFE=20–80@IC=10Adc=12(

ONSEMION Semiconductor

安森美半導體安森美半導體公司

2N6437

POWERTRANSISTORS(25A,200W)

HIGH-POWERPNPSILICONTRANSISTORS ...designedforuseinindustrialpoweramplifiersandswitchingcircuitapplications. FEATURES: *HighDCCurrentGain hFE=20-80?lc=10A =12(Min)?lc=25A *LowCollector-EmitterSaturationVoltage VCB(sat)=1.0V(Max.)@lc=10A,IB

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導體股份有限公司

供應商型號品牌批號封裝庫存備注價格
MOT
24+
TO-3
268
詢價
更多J2N6437供應商 更新時間2025-3-20 15:30:00

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