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JAN1N3825UR-1TR中文資料美高森美數(shù)據(jù)手冊(cè)PDF規(guī)格書

JAN1N3825UR-1TR
廠商型號(hào)

JAN1N3825UR-1TR

功能描述

SILICON 1 WATT ZENER DIODES

文件大小

288.39 Kbytes

頁(yè)面數(shù)量

3 頁(yè)

生產(chǎn)廠商 Microsemi Corporation
企業(yè)簡(jiǎn)稱

Microsemi美高森美

中文名稱

美高森美公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2024-12-26 23:00:00

JAN1N3825UR-1TR規(guī)格書詳情

DESCRIPTION

This well established zener diode series for the 1N3821 thru 1N3830A JEDEC registration in the glass hermetic sealed DO-13 package provides a low voltage selection for 3.3 to 7.5 volts. It is also well suited for highreliability applications where it is available in JAN, JANTX, and JANTXV military qualifications. Higher voltages are also available in the 1N3016 thru 1N3051 series (6.8 V to 200 V) in the same package (see separate data sheet). Microsemi also offers numerous other Zener diode products for a variety of other packages including surface mount.

FEATURES

? Zener Voltage Range: 3.3 V to 7.5 V

? Hermetically sealed DO-13 metal package

? Internally solder-bonded construction.

? Also available in JAN, JANTX, JANTXV qualifications per MIL-PRF19500/115 by adding the JAN, JANTX, or JANTXV prefixes to part numbers for desired level of screening, e.g. JANTX1N3821, JANTXV1N3051A, etc.

? Surface mount also available with 1N3821UR-1 thru 1N30330AUR-1 series on separate data sheet

APPLICATIONS / BENEFITS

? Regulates voltage over a broad operating current and temperature range

? Low voltage selection from 3.3 to 7.5 V

? Tight voltage tolerances available

? Low reverse (leakage) currents

? Nonsensitive to ESD

? Hermetically sealed metal package

? Inherently radiation hard as described in Microsemi MicroNote 050

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MICROCHIP(美國(guó)微芯)
23+
DO41
7350
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MOT
23+
65480
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MICROSEMI
638
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Microchip
2022+
原廠原包裝
8600
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Microsemi
1941+
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909
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Microsemi
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NA
909
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CCZL
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A-81
9
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MICROSEMI
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DO-41
326
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