JANS2N6849中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET ?TRANSISTORS

THRU-HOLE - TO-205AF (TO-39)

The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.

They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Features:

■ Repetitive Avalanche Ratings

■ Dynamic dv/dt Rating

■ Hermetically Sealed

■ Simple Drive Requirements

■ Ease of Paralleling

■ ESD Rating: Class 1C per MIL-STD-750, Method 1020