JANSF2N7661D5中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Features

? Single event effect (SEE) hardened

(up to LET of 90.5 MeV·cm2/mg)

? Improved SOA for linear mode operation

? Low RDS(on)

? Improved avalanche energy

? Simple drive requirements

? Hermetically sealed

? Electrically isolated

? Ceramic eyelets

? ESD rating: class 2 per MIL-STD-750, Method 1020

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel MOSFETs

are the first radiation hardened devices that are based on a superjunction technology. These devices have improved

immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy

Transfer (LET) up to 90.5 MeV·cm2/mg. Their combination of low RDS(on) and improved SOA allows for better

performance in applications such as Latching Current Limiters (LCL), Solid-State Power Controllers (SSPC) or DCDC

converters. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast

switching and temperature stability of electrical parameters.