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JANSR2N7278中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

JANSR2N7278
廠商型號

JANSR2N7278

功能描述

4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET

文件大小

39.49 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-17 10:28:00

JANSR2N7278規(guī)格書詳情

Description

The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m?. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features

? 4A, 250V, rDS(ON) = 0.700?

? Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

? Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80 BVDSS

- Typically Survives 2E12 if Current Limited to IDM

? Photo Current

- 4nA Per-RAD(Si)/s Typically

? Neutron

- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2

- Usable to 1E14 Neutrons/cm2

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