JANSR2N7583U2A中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

Features

? Single event effect (SEE) hardened

(up to LET of 90 MeV·cm2/mg)

? Low RDS(on)

? Low total gate charge

? Simple drive requirements

? Hermetically sealed

? Ceramic package

? Light weight

? Surface mount

? ESD rating: Class 3A per MIL-STD-750, Method 1020

Potential Applications

? DC-DC converter

? Motor drives

? Electric propulsion

Description

IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of

90 MeV·cm2/mg. The combination of low RDS(on) and low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor controllers. These devices retain all of the well-established

advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical

parameters.