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JANSR2ST3360KX中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
JANSR2ST3360KX |
| 功能描述 | Rad-Hard 60 V, 0.8 A NPN and PNP complementary transistors |
| 文件大小 |
272.25 Kbytes |
| 頁(yè)面數(shù)量 |
12 頁(yè) |
| 生產(chǎn)廠商 | STMicroelectronics |
| 企業(yè)簡(jiǎn)稱 |
STMICROELECTRONICS【意法半導(dǎo)體】 |
| 中文名稱 | 意法半導(dǎo)體集團(tuán)官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-2-2 15:00:00 |
JANSR2ST3360KX規(guī)格書詳情
Features
? Hermetic package
? Qualified as per MIL-PRF-M19500/773
? 100 krad
Description
The JANS2ST3360K is dual complementary (NPN and PNP) bipolar transistor in a
single Flat-8 hermetic package. Qualified as per MIL-PRF-M19500/773 it is available
in JANS and JANSR screening options.
Able to operate under critical environment and radiation exposure, it provides high
reliability performance and immunity to the total ionizing dose (TID) at high and low
dose rate conditions.
Specifically recommended for space and harsh environment applications it is suitable
for low current and high precision circuits such preamplifiers, oscillators, current
mirror configuration and high peak current required in power MOSFET driver circuits.
In case of discrepancies between this datasheet and the relevant agency
specification, the latter takes precedence.
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
7000 |
詢價(jià) | ||||
MICROSEMI |
638 |
原裝正品 |
詢價(jià) | ||||
MSC |
23+ |
65480 |
詢價(jià) | ||||
IR |
22+ |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | |||
MSC |
24+ |
MODULE |
2050 |
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨 |
詢價(jià) | ||
RP |
23+ |
SOP64 |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
ANY |
新 |
1 |
全新原裝 貨期兩周 |
詢價(jià) | |||
IR |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) |
