首頁 >JANTXV1N5523UR>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
JANTXV1N5523UR | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW ?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW ?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司 | NJSEMI | ||
LowVoltageAvalanche500mWZenerDiodesDO-35 FEATURES ?LOWZENERNOISESPECIFIED ?LOWZENERIMPEDANCE ?LOWLEAKAGECURRENT ?HERMETICALLYSEALEDGLASSPACKAGE ?JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 濟南固锝電子濟南固锝電子器件有限公司 | JGD | ||
LOWVOLTAGEAVALANCHEDIODESDO-35 FEATURES ?LOWZENERNOISESPECIFIED ?LOWZENERIMPEDANCE ?LOWLEAKAGECURRENT ?HERMETICALLYSEALEDGLASSPACKAGE ?JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
LOWVOLTAGEAVALANCHEZENERDIODESHIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE LOWVOLTAGEAVALANCHEZENERDIODES HIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE 1.PackageStyleDO-7 2.SuffixdenotesVztolerance:nonsuffix±20,Asuffix±10:Ir@Vr1,Vz,+Vfonly.SuffixB±5:Ir@Vr2,Vz,DVz,Vf,ND. 3.Measuredwith10,60HzACsuperimposedonIzt. 4.Measuredfrom | KNOX Knox Semiconductor, Inc | KNOX | ||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW ?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW ?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 濟南固锝電子濟南固锝電子器件有限公司 | JGD | ||
LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHEZENERDIODES 400MILLIWATTS 3.3THRU33VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司 | NJSEMI | ||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW ?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW ?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
LOWREVERSELEAKAGECHARACTERISTICS ?1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?LOWREVERSELEAKAGECHARACTERISTICS ?LOWNOISECHARACTERISTICS ?DOUBLEPLUGCONSTRUCTION ?METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated | CDI-DIODE | ||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 濟南固锝電子濟南固锝電子器件有限公司 | JGD | ||
LOWREVERSELEAKAGECHARACTERISTICS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
0.5WZenerDiode Features ?SharpReverseCharacteristics ?LowReverseCurrentLevels ?HighReliabilityGoldBackMetal ?HighReliabilityTestedGrades. | SS Silicon Supplies | SS | ||
LowVoltageSurfaceMount500mWAvalancheDiodes ?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW ?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 濟南固锝電子濟南固锝電子器件有限公司 | JGD |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
MICROSEMI |
638 |
原裝正品 |
詢價 | ||||
MICROSEMI |
三年內 |
1983 |
只做原裝正品 |
詢價 | |||
Microsemi |
1941+ |
N/A |
909 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
MICROSEMI |
1809+ |
DO-213 |
326 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Microsemi |
22+ |
NA |
909 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
MICROCHIP(美國微芯) |
23+ |
DO213AA |
7350 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!! |
詢價 | ||
Microchip |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 |
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