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JANTXV1N5543UR

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTXV1N5543UR-1

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5543

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5543

LOWVOLTAGEAVALANCHEDIODESDO-35

FEATURES ?LOWZENERNOISESPECIFIED ?LOWZENERIMPEDANCE ?LOWLEAKAGECURRENT ?HERMETICALLYSEALEDGLASSPACKAGE ?JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5543

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

濟(jì)南固锝電子濟(jì)南固锝電子器件有限公司

1N5543

LowVoltageAvalanche500mWZenerDiodesDO-35

FEATURES ?LOWZENERNOISESPECIFIED ?LOWZENERIMPEDANCE ?LOWLEAKAGECURRENT ?HERMETICALLYSEALEDGLASSPACKAGE ?JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5543

LOWVOLTAGEAVALANCHEZENERDIODESHIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE

LOWVOLTAGEAVALANCHEZENERDIODES HIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE 1.PackageStyleDO-7 2.SuffixdenotesVztolerance:nonsuffix±20,Asuffix±10:Ir@Vr1,Vz,+Vfonly.SuffixB±5:Ir@Vr2,Vz,DVz,Vf,ND. 3.Measuredwith10,60HzACsuperimposedonIzt. 4.Measuredfrom

KNOX

Knox Semiconductor, Inc

1N5543

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

1N5543A

LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES

LOWVOLTAGEAVALANCHESSILICONOXIDEPASSIVATEDZENERREGULATORDIODES LOWVOLTAGEAVALANCHEZENERDIODES 400MILLIWATTS 3.3THRU33VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

1N5543A

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5543A

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

濟(jì)南固锝電子濟(jì)南固锝電子器件有限公司

1N5543AUR

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5543B

LOWREVERSELEAKAGECHARACTERISTICS

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5543B

LOWREVERSELEAKAGECHARACTERISTICS

?1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?LOWREVERSELEAKAGECHARACTERISTICS ?LOWNOISECHARACTERISTICS ?DOUBLEPLUGCONSTRUCTION ?METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

1N5543B

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

濟(jì)南固锝電子濟(jì)南固锝電子器件有限公司

1N5543B

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5543B

0.5WZenerDiode

Features ?SharpReverseCharacteristics ?LowReverseCurrentLevels ?HighReliabilityGoldBackMetal ?HighReliabilityTestedGrades.

SS

Silicon Supplies

1N5543BUR

LowVoltageSurfaceMount500mWAvalancheDiodes

?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5543BUR

LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW

?1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 ?ZENERDIODE,500mW ?LEADLESSPACKAGEFORSURFACEMOUNT ?LOWREVERSELEAKAGECHARACTERISTICS ?METALLURGICALLYBONDED

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5543C

0.4WLOWVOLTAGEAVALANCHEDIODES

FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage

JGDJinan Gude Electronic Device

濟(jì)南固锝電子濟(jì)南固锝電子器件有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Microsemi
1941+
N/A
909
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
詢(xún)價(jià)
MICROSEMI
1809+
DO-35
326
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢(xún)價(jià)
Microsemi
22+
NA
909
加我QQ或微信咨詢(xún)更多詳細(xì)信息,
詢(xún)價(jià)
MICROCHIP(美國(guó)微芯)
23+
DO35(DO204AH)
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
詢(xún)價(jià)
Microchip
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
詢(xún)價(jià)
更多JANTXV1N5543UR供應(yīng)商 更新時(shí)間2024-10-28 10:21:00