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JANTXV2N6760

POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.00ohm, Id=5.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

JANTXV2N6760

TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=1.00ohm, Id=5.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

2N6760

N-CHANNELMOSFET

N-CHANNELMOSFET QualifiedperMIL-PRF-19500/542

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N6760

N-CHANNELMOSFET

N-CHANNELMOSFET QualifiedperMIL-PRF-19500/542

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N6760

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

2N6760

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channel,enchancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N6760

VGSRatedat?20V

DESCRIPTION ?VGSRatedat±20V ?SiliconGateforfastswitchingspeeds ?IDSS、RDS(ON),specifiedatelevatedtemperature ?Lowdrivereqirements APPLICATIONS designedforhighpower,highspeedapplication,suchasswitchingapplies,UPS,ACandDCmotorcontrols,relayandhighenergy

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

JANTX2N6760

RepetitiveAvalancheRatings

IRF

International Rectifier

JANTX2N6760

POWERMOSFETN-CHANNEL(BVdss=400V,Rds(on)=1.00ohm,Id=5.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

JANTX2N6760

TRANSISTORSN-CHANNEL(Vdss=400V,Rds(on)=1.00ohm,Id=5.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    JANTXV2N6760

  • 制造商：

    International Rectifier

  • 功能描述：

    TRANS MOSFET N-CH 400V 5.5A 2PIN TO-3 - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR/MOT
24+
TO-3
1204
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
MICROSEMI
638
原裝正品
 詢價(jià)
Microsemi Corporation
22+
TO204AA TO3
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
Microsemi Corporation
21+
TO204AA TO3
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
Microsemi Corporation
23+
TO204AA TO3
9000
原裝正品，支持實(shí)單
 詢價(jià)
Microsemi Corporation
2022+
TO-204AA,TO-3
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價(jià)
INFINEON
23+
M-TO204-3
14253
原包裝原標(biāo)現(xiàn)貨,假一罰十,
 詢價(jià)
IR
23+
TO-3
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-3
7000
詢價(jià)
更多JANTXV2N6760供應(yīng)商 更新時(shí)間2025-1-24 15:30:00

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