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JANTXV2N6770中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
JANTXV2N6770規(guī)格書詳情
The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
Features:
■ Repetitive Avalanche Ratings
■ Dynamic dv/dt Rating
■ Hermetically Sealed
■ Simple Drive Requirements
■ Ease of Paralleling
產(chǎn)品屬性
- 型號：
JANTXV2N6770
- 制造商：
International Rectifier
- 功能描述：
100V THRU 500V, UP TO 38A, N-CH, ENHANCEMENT MODE MOSFET PWR - Bulk
- 制造商：
Microsemi Corporation
- 功能描述：
N CHANNEL MOSFET(NFET) - Bulk
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
81 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
HARRIS |
24+ |
35200 |
一級代理/放心采購 |
詢價 | |||
IR/MOT |
24+ |
TO-3 |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
JANTXV2N6782 |
20 |
20 |
詢價 | ||||
IR/MOT |
24+ |
TO-3 |
68900 |
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126 |
詢價 | ||
LT |
21+ |
2/TO3 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
IR |
24+ |
260 |
詢價 | ||||
IR |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | |||
MICROSEMI |
638 |
原裝正品 |
詢價 | ||||
IR |
23+ |
TO-3 |
7000 |
詢價 |
