1 Features

? Ultra-low noise:

– Voltage noise:

? 0.8 nV/√Hz at 1 kHz, IDS = 5 mA

? 0.9 nV/√Hz at 1 kHz, IDS = 2 mA

– Current noise: 1.8 fA/√Hz at 1 kHz

? Low gate current: 10 pA (max)

? Low input capacitance: 24 pF at VDS = 5 V

? High gate-to-drain and gate-to-source breakdown

voltage: –40 V

? High transconductance: 68 mS

? Packages: Small SC70 and SOT-23

2 Applications

? Microphone inputs

? Hydrophones and marine equipment

? DJ controllers, mixers, and other DJ equipment

? Professional audio mixer or control surface

? Guitar amplifier and other music instrument

amplifier

? Condition monitoring sensor

3 Description

The JFE150 is a Burr-Brown? discrete JFET built

using Texas Instruments' modern, high-performance,

analog bipolar process. The JFE150 features

performance not previously available in older discrete

JFET technologies. The JFE150 offers the maximum

possible noise-to-power efficiency and flexibility,

where the quiescent current can be set by the user

and yields excellent noise performance for currents

from 50 μA to 20 mA. When biased at 5 mA, the

device yields 0.8 nV/√Hz of input-referred noise,

giving ultra-low noise performance with extremely

high input impedance (> 1 TΩ). The JFE150 also

features integrated diodes connected to separate

clamp nodes to provide protection without the addition

of high-leakage, nonlinear, external diodes.

The JFE150 can withstand a high drain-to-source

voltage of 40 V, as well as gate-to-source and gateto-

drain voltages down to –40 V. The temperature

range is specified from –40°C to +125°C. The device

is offered in 5-pin SOT-23 and SC70 packages.

JFE150DCKR屬于分立半導(dǎo)體產(chǎn)品 > 晶體管 - JFET。美國德州儀器公司制造生產(chǎn)的JFE150DCKR晶體管 - JFET結(jié)柵場效應(yīng)晶體管 (JFET) 是用作電子控制開關(guān)、放大器或電壓控制電阻器的器件。在柵極端子與源極端子之間施加適當極性的電勢差就會增加電流流動的阻力，這意味著源極端子與漏極端子之間通道中流動的電流會更少。由于電荷流過源極與漏極端子之間的半導(dǎo)體通道，因此 JFET 不需要偏置電流。