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JS48F4400P0P0Q0中文資料NUMONYX數(shù)據(jù)手冊PDF規(guī)格書
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Introduction
This datasheet contains information about the Numonyx? Wireless Flash Memory (W18) device family. This section describes nomenclature used in the datasheet. Section 2.0provides an overview of the W18 flash memory device. Section 6.0, Section 7.0, and Section 8.0describe the electrical specifications for extended temperature product offerings. Ordering information can be found in Section C.
Product Features
? High Performance Read-While-Write/Erase
— Burst frequency at 66 MHz (zero wait states)
—60ns Initial access read speed
— 11 ns Burst mode read speed
— 20 ns Page mode read speed
— 4-, 8-, 16-, and Continuous-Word Burst mode reads
— Burst and Page mode reads in all Blocks, across all partition boundaries
— Burst Suspend feature
— Enhanced Factory Programming at 3.1 μs/word ?
Security
—128-BitOTP Protection Register:
64 unique pre-programmed bits + 64 user-programmable bits
— Absolute Write Protection with VPP at ground
— Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability?
Quality and Reliability
—Temperature Range:–40 °C to +85 °C
— 100K Erase Cycles per Block
— 90 nm ETOX? IX Process
— 130 nm ETOX? VIII Process
Architecture
— Multiple 4-Mbit partitions
— Dual Operation: RWW or RWE
— Parameter block size = 4-Kword
— Main block size = 32-Kword
— Top or bottom parameter devices
—16-bit wide data bus
Software
— 5 μs (typ.) Program and Erase Suspend latency time
— Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible
— Programmable WAIT signal polarity
Packaging and Power
— 90 nm: 32- and 64-Mbit in VF BGA
— 130 nm: 32-, 64-, and 128-Mbit in VF BGA
— 130 nm: 128-Mbit in QUAD+ package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
—VCC= 1.70 V to 1.95 V
—VCCQ(90 nm) = 1.7 V to 1.95 V
—VCCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V
—VCCQ(130 nm) = 1.35 V to 2.24 V
— Standby current (130 nm): 8 μA (typ.)
— Read current: 8 mA (4-word burst, typ.)
產(chǎn)品屬性
- 型號:
JS48F4400P0P0Q0
- 制造商:
NUMONYX
- 制造商全稱:
Numonyx B.V
- 功能描述:
StrataFlash㈢ Cellular Memory
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INTEL/英特爾 |
07+ |
TSOP |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
MICRON |
1009+ |
TSOP56 |
1152 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
Micron Technology Inc |
23+/24+ |
56-TFSOP |
8600 |
只供原裝進口公司現(xiàn)貨+可訂貨 |
詢價 | ||
INTEL |
22+ |
FBGA |
10000 |
原裝正品優(yōu)勢現(xiàn)貨供應 |
詢價 | ||
Micron |
21+ |
56TSOP (14x20) |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
INTEL |
2022+ |
TSOP56 |
20000 |
只做原裝進口現(xiàn)貨.假一罰十 |
詢價 | ||
INTEL |
22+ |
TSOP56 |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
MICRON |
2023 |
TSOP56 |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||
INTEL |
21+ |
TSOP56 |
65200 |
一級代理/放心采購 |
詢價 | ||
NUMONYX |
07+21 |
46 |
公司優(yōu)勢庫存 熱賣中! |
詢價 |