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JZ48F4L0QTY中文資料英特爾數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
廠商型號(hào) |
JZ48F4L0QTY |
功能描述 | StrataFlash Wireless Memory |
文件大小 |
1.69919 Mbytes |
頁(yè)面數(shù)量 |
106 頁(yè) |
生產(chǎn)廠商 | Intel Corporation(Integrated Electronics Corporation) |
企業(yè)簡(jiǎn)稱(chēng) |
Intel【英特爾】 |
中文名稱(chēng) | 英特爾(美國(guó)科技公司)官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2024-11-15 23:00:00 |
JZ48F4L0QTY規(guī)格書(shū)詳情
The Intel StrataFlash? wireless memory (L18) device is the latest generation of Intel StrataFlash? memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (MLC) technology.
Product Features
■ High performance Read-While-Write/Erase
— 85 ns initial access
— 54 MHz with zero wait state, 14 ns clock-to-data output synchronous-burst mode
— 25 ns asynchronous-page mode
— 4-, 8-, 16-, and continuous-word burst mode
— Burst suspend
— Programmable WAIT configuration
— Buffered Enhanced Factory Programming (BEFP) at 5 μs/byte (Typ)
— 1.8 V low-power buffered programming at7 μs/byte (Typ)
■ Architecture
— Asymmetrically-blocked architecture
— Multiple 8-Mbit partitions: 64-Mbit and 128-Mbit devices
— Multiple 16-Mbit partitions: 256-Mbit devices
— Four 16-Kword parameter blocks: top or bottom configurations
— 64-Kword main blocks
— Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE)
— Status Register for partition and device status
■ Power
— VCC (core) = 1.7 V - 2.0 V
— VCCQ (I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V
— Standby current: 30 μA (Typ) for 256-Mbit
— 4-Word synchronous read current: 15 mA (Typ)at 54 MHz
— Automatic Power Savings mode
■ Security
— OTP space:
? 64 unique factory device identifier bits
? 64 user-programmable OTP bits
? Additional 2048 user-programmable OTP bits
— Absolute write protection: VPP = GND
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
■ Software
— 20 μs (Typ) program suspend
— 20 μs (Typ) erase suspend
— Intel? Flash Data Integrator optimized
— Basic Command Set (BCS) and Extended Command Set (ECS) compatible
— Common Flash Interface (CFI) capable
■ Quality and Reliability
— Expanded temperature: –25° C to +85° C
— Minimum 100,000 erase cycles per block
— ETOX? VIII process technology (0.13 μm)
■ Density and Packaging
— 64-, 128-, and 256-Mbit density in VF BGA packages
— 128/0 and 256/0 density in SCSP
— 16-bit wide data bus
產(chǎn)品屬性
- 型號(hào):
JZ48F4L0QTY
- 制造商:
INTEL
- 制造商全稱(chēng):
Intel Corporation
- 功能描述:
StrataFlash Wireless Memory
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
JZ |
23+ |
NA/ |
2023 |
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JZ |
24+ |
393325 |
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JINGZHONG |
21+ |
SOT23-5 |
10000 |
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JZ |
SOT89-3 |
56000 |
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1742+ |
MSOP8 |
98215 |
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詢價(jià) | ||
JZ |
2022 |
SOT23-5 |
80000 |
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JZ |
SOT23-5 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
JZ京眾 |
22+ |
MSOP8 |
25000 |
只有原裝原裝,支持BOM配單 |
詢價(jià) | ||
原裝 |
23+ |
SOT23-5 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) |