K1R中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor interface. The M28F201 FLASH Memory product is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.

■ 5V ± 10 SUPPLY VOLTAGE

■ 12V PROGRAMMING VOLTAGE

■ FAST ACCESS TIME: 70ns

■ BYTE PROGRAMMING TIME: 10μs typical

■ ELECTRICAL CHIP ERASE in 1s RANGE

■ LOW POWER CONSUMPTION

– Active Current: 15mAtypical

– Stand-by Current: 10μA typical

■ 10,000 PROGRAM/ERASE CYCLES

■ INTEGRATED ERASE/PROGRAM-STOP TIMER

■ OTP COMPATIBLE PACKAGES and PINOUTS

■ ELECTRONIC SIGNATURE

– ManufacturerCode: 20h

– Device Code: F4h