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PST3636UR

ICforCMOSSystemReset

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會(huì)社

PT3636

HighSensitivityUnipolarSwitch

PROLIFICProlific Technology Inc.

旺玖科技旺玖科技股份有限公司

PT3636

3.8V~24Voperation

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

RMQCBA3636DGBA

36-MbitDDR??IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCEA3636DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCHA3636DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCLA3636DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSAA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)

Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSDA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSGA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    K3636GRA

  • 制造商：

    Siemens

  • 功能描述：

    6 Gang Moulded Graphite Frontplate

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
富士
23+
TO-3P
5000
原裝正品,假一罰十
 詢價(jià)
NEC
23+
TO-251
31000
專業(yè)優(yōu)勢(shì)供應(yīng)
 詢價(jià)
NEC
2018+
TO252
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫(kù)存放心
 詢價(jià)
NEC
6000
面議
19
DIP/SMD
 詢價(jià)
GAMMA
23+
TO-220-5
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
N
SOT-252
22+
6000
十年配單,只做原裝
 詢價(jià)
NEC
23+
SOT-252
4500
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售
 詢價(jià)
NEC
22+
SOT252
8000
原裝正品支持實(shí)單
 詢價(jià)
N
23+
SOT-252
6000
原裝正品，支持實(shí)單
 詢價(jià)
NEC
SOT-252
8100
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢價(jià)
更多K3636GRA供應(yīng)商 更新時(shí)間2025-5-6 15:36:00

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