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K4B4G1646B

4Gb B-die DDR3 SDRAM Olny x16

The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures ?JEDECstandard1.5V(1.425V~1.575V) ?VDDQ=1.5V(1.425V~1.575V)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G1646B

DDR3 SDRAM Memory

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G1646B-HCF8

4Gb B-die DDR3 SDRAM Olny x16

The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures ?JEDECstandard1.5V(1.425V~1.575V) ?VDDQ=1.5V(1.425V~1.575V)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G1646B-HCH9

4Gb B-die DDR3 SDRAM Olny x16

The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures ?JEDECstandard1.5V(1.425V~1.575V) ?VDDQ=1.5V(1.425V~1.575V)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G1646B-HCK0

4Gb B-die DDR3 SDRAM Olny x16

The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures ?JEDECstandard1.5V(1.425V~1.575V) ?VDDQ=1.5V(1.425V~1.575V)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G1646B-HCMA

4Gb B-die DDR3 SDRAM Olny x16

The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures ?JEDECstandard1.5V(1.425V~1.575V) ?VDDQ=1.5V(1.425V~1.575V)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G1646B-HCNB

4Gb B-die DDR3 SDRAM Olny x16

The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures ?JEDECstandard1.5V(1.425V~1.575V) ?VDDQ=1.5V(1.425V~1.575V)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G1646B-HIH9

4Gb B-die DDR3 SDRAM Olny x16

The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures ?JEDECstandard1.5V(1.425V~1.575V) ?VDDQ=1.5V(1.425V~1.575V)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G1646B-HIK0

4Gb B-die DDR3 SDRAM Olny x16

The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures ?JEDECstandard1.5V(1.425V~1.575V) ?VDDQ=1.5V(1.425V~1.575V)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4B4G1646B-HPH9

4Gb B-die DDR3 SDRAM Olny x16

The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures ?JEDECstandard1.5V(1.425V~1.575V) ?VDDQ=1.5V(1.425V~1.575V)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    K4B4G1646B

  • 制造商：

    Samsung Semiconductor

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
SAMSUNG原裝正品專賣
23+
FBGA96
12800
專注原裝正品現(xiàn)貨特價(jià)中量大可定
 詢價(jià)
SAMSUNG/三星
23+
BGA
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價(jià)
SAMSUNG
12+
FBGA96
6
詢價(jià)
SAMSUNG
FBGA
1251
正品原裝--自家現(xiàn)貨-實(shí)單可談
 詢價(jià)
SX
14+
FBGA96
2000
原裝現(xiàn)貨價(jià)格有優(yōu)勢量大可以發(fā)貨
 詢價(jià)
SAMSUNG
2016+
BGA
1000
只做原裝,假一罰十,公司優(yōu)勢內(nèi)存型號!
 詢價(jià)
SAMSUNG
24+
FBGA
9800
全新進(jìn)口原裝現(xiàn)貨假一罰十
 詢價(jià)
SAMSUNG
24+
BGA
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
SAMSUNG
FBGA96
27056
提供BOM表配單只做原裝貨值得信賴
 詢價(jià)
Samsung
1651+
DDR3256Mx16PC16001.5vFBG
12500
只做原裝進(jìn)口,假一罰十
 詢價(jià)
更多K4B4G1646B供應(yīng)商 更新時(shí)間2025-1-28 9:00:00

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