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K4E660812B

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E660812C

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E660812E

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E660812E-JC/L

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E660812E-JCSLASHL

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E660812E-TC/L

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E660812E-TCSLASHL

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    K4E660812B

  • 制造商：

    SAMSUNG

  • 制造商全稱(chēng)：

    Samsung semiconductor

  • 功能描述：

    8M x 8bit CMOS Dynamic RAM with Extended Data Out

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SAMSUNG
6000
面議
19
SOP
 詢價(jià)
SAMSANG
19+
TSOP
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
SAMSUNG/三星
01+
TSOP
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
SAMSUNG
23+
TSOP
8000
只做原裝現(xiàn)貨
 詢價(jià)
SAMSUNG
23+
TSOP
7000
詢價(jià)
SEC
TSOP32
8
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢價(jià)
SEC
17+
TSOP32
9988
只做原裝進(jìn)口,自己庫(kù)存
 詢價(jià)
SEC
23+
TSOP32
20000
全新原裝假一賠十
 詢價(jià)
SAMSUNG/三星
23+
TSOP
5000
一級(jí)代理原廠VIP渠道,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、
 詢價(jià)
更多K4E660812B供應(yīng)商 更新時(shí)間2025-2-21 15:44:00

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