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K4H511638D-UC/LB3中文資料三星數(shù)據(jù)手冊PDF規(guī)格書
K4H511638D-UC/LB3規(guī)格書詳情
Key Features
? VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
? VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
? Double-data-rate architecture; two data transfers per clock cycle
? Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
? Four banks operation
? Differential clock inputs(CK and CK)
? DLL aligns DQ and DQS transition with CK transition
? MRS cycle with address key programs
-. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
? All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
? Data I/O transactions on both edges of data strobe
? Edge aligned data output, center aligned data input
? LDM,UDM for write masking only (x16)
? DM for write masking only (x4, x8)
? Auto & Self refresh
? 7.8us refresh interval(8K/64ms refresh)
? Maximum burst refresh cycle : 8
? 66pin TSOP II Pb-Free package
? RoHS compliant
產品屬性
- 型號：
K4H511638D-UC/LB3
- 制造商：
SAMSUNG
- 制造商全稱：
Samsung semiconductor
- 功能描述：
512Mb D-die DDR SDRAM Specification
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
2016+ |
TSOP |
2500 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
SAMSUNG |
20+ |
TSOP |
2960 |
誠信交易大量庫存現(xiàn)貨 |
詢價 | ||
SAMSUNG |
2020+ |
TSOP |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
SAM |
2020+ |
TSOP |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
SAMSUNG |
2016+ |
TSOP |
6523 |
只做進口原裝現(xiàn)貨!假一賠十! |
詢價 | ||
SAMSUNG |
23+ |
TSOP |
18689 |
詢價 | |||
SAMSUNG(三星) |
23+ |
N/A |
589610 |
新到現(xiàn)貨 原廠一手貨源 價格秒殺代理! |
詢價 | ||
SAMSUNG |
TSOP |
140 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
SAMSUNG/三星 |
22+ |
TSOP |
39711 |
原裝正品現(xiàn)貨 |
詢價 | ||
SAMSUNG |
2022 |
TSOP66 |
2550 |
原廠原裝正品,價格超越代理 |
詢價 |
