K4S561632E-TC75中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書

GENERAL DESCRIPTION

The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES

? JEDEC standard 3.3V power supply

? LVTTL compatible with multiplexed address

? Four banks operation

? MRS cycle with address key programs

-. CAS latency (2 & 3)

-. Burst length (1, 2, 4, 8 & Full page)

-. Burst type (Sequential & Interleave)

? All inputs are sampled at the positive going edge of the system clock.

? Burst read single-bit write operation

? DQM (x4,x8) & L(U)DQM (x16) for masking

? Auto & self refresh

? 64ms refresh period (8K Cycle)