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K4S561632A

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S561632Ais268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632B

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

TheK4S561632Bis268,435,456bitssynchronoushighdatarate DynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleoneveryclo

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632C

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAM

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632C-TC

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAM

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632D

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S561632Dis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632E

256MbE-dieSDRAMSpecification

GENERALDESCRIPTION TheK4S560432E/K4S560832E/K4S561632Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632E

256MbE-dieSDRAMSpecification54pinsTSOP-II

GENERALDESCRIPTION TheK4S560432E/K4S560832Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632H

SDRAMProductGuide

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632J

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632J

256MbJ-dieSDRAMSpecification

GeneralDescription TheK4S560432J/K4S560832J/K4S561632Jis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung semiconductor

三星三星半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
MICROCHIP/微芯
23+
NA
13000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
MICROCHIP/微芯
23+
NA
98900
原廠原裝正品現(xiàn)貨!!
 詢價(jià)
MICROCHIP/微芯
22+
NA
25000
只有原裝原裝,支持BOM配單
 詢價(jià)
MICROCHIP/微芯
24+
NA
6880
只做原裝，公司現(xiàn)貨庫存
 詢價(jià)
三星
24+
TSOP
2000
詢價(jià)
SAMSUNG
15+
TSSOP
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價(jià)
Samsung
23+
TSOP
18689
詢價(jià)
SAMSUNG
23+
TSSOP
3500
絕對(duì)全新原裝!優(yōu)勢供貨渠道!特價(jià)!請(qǐng)放心訂購!
 詢價(jià)
SAMSUNG
24+
TSOP-54
4650
詢價(jià)
SAMSUNG
17+
TSSOP
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
更多K4S561632H-UC供應(yīng)商 更新時(shí)間2025-1-30 9:30:00

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