K4S640832E-TL1L中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書

GENERAL DESCRIPTION

The K4S640832E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG￠s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES

? JEDEC standard 3.3V power supply

? LVTTL compatible with multiplexed address

? Four banks operation

? MRS cycle with address key programs

-. CAS latency (2 & 3)

-. Burst length (1, 2, 4, 8 & Full page)

-. Burst type (Sequential & Interleave)

? All inputs are sampled at the positive going edge of the system clock

? Burst read single-bit write operation

? DQM for masking

? Auto & self refresh

? 64ms refresh period (4K Cycle)